2SJ633-TL-E

SKU: 7958

Manufacturer: onsemi

Trans MOSFET P-CH Si 60V 4A

680 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Obsolete
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	Si
Configuration	Single
Channel Mode	Enhancement
Channel Type	P
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±20
Maximum Continuous Drain Current (A)	4
Maximum Gate Source Leakage Current (nA)	10000
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	365@10V
Typical Gate Charge @ Vgs (nC)	9@10V
Typical Gate Charge @ 10V (nC)	9
Typical Input Capacitance @ Vds (pF)	365@20V
Maximum Power Dissipation (mW)	1000
Typical Fall Time (ns)	41
Typical Rise Time (ns)	45
Typical Turn-Off Delay Time (ns)	33
Typical Turn-On Delay Time (ns)	9
Operating Temperature-Min	-55

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Obsolete
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	Si
Configuration	Single
Channel Mode	Enhancement
Channel Type	P
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±20
Maximum Continuous Drain Current (A)	4
Maximum Gate Source Leakage Current (nA)	10000
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	365@10V
Typical Gate Charge @ Vgs (nC)	9@10V
Typical Gate Charge @ 10V (nC)	9
Typical Input Capacitance @ Vds (pF)	365@20V
Maximum Power Dissipation (mW)	1000
Typical Fall Time (ns)	41
Typical Rise Time (ns)	45
Typical Turn-Off Delay Time (ns)	33
Typical Turn-On Delay Time (ns)	9
Operating Temperature-Min	-55