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    2N7000

    SKU: 9580
    Manufacturer: onsemi
    Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Bag
    41680 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    Automotive No
    PPAP No
    Product Category Small Signal
    Configuration Single
    Process Technology DMOS
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 60
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 3
    Operating Junction Temperature (°C) -55 to 150
    Maximum Continuous Drain Current (A) 0.2
    Maximum Gate Source Leakage Current (nA) 10
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 5000@10V
    Typical Input Capacitance @ Vds (pF) 20@25V
    Typical Reverse Transfer Capacitance @ Vds (pF) 4@25V
    Minimum Gate Threshold Voltage (V) 0.8
    Typical Output Capacitance (pF) 11
    Maximum Power Dissipation (mW) 400
    Typical Turn-Off Delay Time (ns) 10(Max)
    Typical Turn-On Delay Time (ns) 10(Max)
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Bag
    Maximum Positive Gate Source Voltage (V) 20
    Maximum Pulsed Drain Current @ TC=25°C (A) 0.5
    Typical Gate Plateau Voltage (V) 4.5
    Typical Gate Threshold Voltage (V) 2.1
    Original Package TO-92
    Pin Count 3
    Standard Package Method TO-92
    Terminal Form Through Hole
    Package Height 5.33(Max)
    Package Length 5.2(Max)
    Package Width 4.19(Max)
    PCB changed 3
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    Automotive No
    PPAP No
    Product Category Small Signal
    Configuration Single
    Process Technology DMOS
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 60
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 3
    Operating Junction Temperature (°C) -55 to 150
    Maximum Continuous Drain Current (A) 0.2
    Maximum Gate Source Leakage Current (nA) 10
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 5000@10V
    Typical Input Capacitance @ Vds (pF) 20@25V
    Typical Reverse Transfer Capacitance @ Vds (pF) 4@25V
    Minimum Gate Threshold Voltage (V) 0.8
    Typical Output Capacitance (pF) 11
    Maximum Power Dissipation (mW) 400
    Typical Turn-Off Delay Time (ns) 10(Max)
    Typical Turn-On Delay Time (ns) 10(Max)
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Bag
    Maximum Positive Gate Source Voltage (V) 20
    Maximum Pulsed Drain Current @ TC=25°C (A) 0.5
    Typical Gate Plateau Voltage (V) 4.5
    Typical Gate Threshold Voltage (V) 2.1
    Original Package TO-92
    Pin Count 3
    Standard Package Method TO-92
    Terminal Form Through Hole
    Package Height 5.33(Max)
    Package Length 5.2(Max)
    Package Width 4.19(Max)
    PCB changed 3