EU RoHS
|
Compliant |
ECCN (US)
|
EAR99 |
Part Status
|
Active |
HTS
|
8541.21.00.75 |
SVHC
|
Yes |
Automotive
|
No |
PPAP
|
No |
Product Category
|
Power MOSFET |
Configuration
|
Single |
Process Technology
|
TMOS |
Channel Mode
|
Enhancement |
Channel Type
|
P |
Number of Elements per pcs
|
1 |
Maximum Drain Source Voltage (V)
|
20 |
Maximum Gate Source Voltage (V)
|
12 |
Maximum Gate Threshold Voltage (V)
|
0.9 |
Operating Junction Temperature (°C)
|
-55 to 150 |
Maximum Continuous Drain Current (A)
|
2.8 |
Maximum Gate Source Leakage Current (nA)
|
100 |
Maximum IDSS (uA)
|
1 |
Maximum Drain Source Resistance (mOhm)
|
74@4.5V |
Typical Gate Charge @ Vgs (nC)
|
7.7@4.5V |
Typical Gate to Drain Charge (nC)
|
1.65 |
Typical Gate to Source Charge (nC)
|
1 |
Typical Input Capacitance @ Vds (pF)
|
744@20V |
Typical Reverse Transfer Capacitance @ Vds (pF)
|
53@20V |
Minimum Gate Threshold Voltage (V)
|
0.47 |
Typical Output Capacitance (pF)
|
65 |
Maximum Power Dissipation (mW)
|
833 |
Typical Fall Time (ns)
|
68 |
Typical Rise Time (ns)
|
18 |
Typical Turn-Off Delay Time (ns)
|
135 |
Typical Turn-On Delay Time (ns)
|
7 |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
150 |
Packing Method
|
Tape and Reel |
Maximum Power Dissipation on PCB @ TC=25°C (W)
|
0.833 |
Maximum Pulsed Drain Current @ TC=25°C (A)
|
16 |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
|
150 |
Typical Diode Forward Voltage (V)
|
0.8 |
Typical Gate Plateau Voltage (V)
|
1.35 |
Maximum Diode Forward Voltage (V)
|
1.2 |
Typical Gate Threshold Voltage (V)
|
0.65 |
Maximum Positive Gate Source Voltage (V)
|
12 |
Maximum Continuous Drain Current on PCB @ TC=25°C (A)
|
2.8 |
Pin Count
|
3 |
Standard Package Method
|
SOT |
Original Package
|
SOT-23 |
Terminal Form
|
Surface Mount |
Package Height
|
1(Max) |
Package Length
|
3(Max) |
Package Width
|
1.4(Max) |
PCB changed
|
3 |