|
EU RoHS
|
Compliant with Exemption |
|
ECCN (US)
|
EAR99 |
|
Part Status
|
Active |
|
SVHC
|
Yes |
|
SVHC Exceeds Threshold
|
Yes |
|
Automotive
|
Yes |
|
PPAP
|
Unknown |
|
Product Category
|
Power MOSFET |
|
Configuration
|
Dual Dual Drain |
|
Process Technology
|
TMOS |
|
Channel Mode
|
Enhancement |
|
Channel Type
|
N |
|
Number of Elements per pcs
|
2 |
|
Maximum Drain Source Voltage (V)
|
30 |
|
Maximum Gate Source Voltage (V)
|
20 |
|
Maximum Gate Threshold Voltage (V)
|
4 |
|
Maximum Continuous Drain Current (A)
|
40 |
|
Maximum Gate Source Leakage Current (nA)
|
100 |
|
Maximum IDSS (uA)
|
1 |
|
Maximum Drain Source Resistance (mOhm)
|
5.1@10V |
|
Typical Gate Charge @ Vgs (nC)
|
31.1@10V |
|
Typical Gate Charge @ 10V (nC)
|
31.1 |
|
Typical Input Capacitance @ Vds (pF)
|
1764@25V |
|
Maximum Power Dissipation (mW)
|
68000 |
|
Typical Fall Time (ns)
|
13 |
|
Typical Rise Time (ns)
|
12.5 |
|
Typical Turn-Off Delay Time (ns)
|
19.5 |
|
Typical Turn-On Delay Time (ns)
|
9.5 |
|
Operating Temperature-Min
|
-55 |
|
Operating Temperature-Max
|
175 |
|
Supplier Temperature Grade
|
Automotive |
|
Original Package
|
LFPAK-D |
|
Pin Count
|
8 |
|
Terminal Form
|
Surface Mount |
|
Package Height
|
1.05(Max) |
|
Package Length
|
5.3(Max) |
|
Package Width
|
4.7(Max) |