BLP7G22-10

SKU: 32242

Manufacturer: NXP Semiconductors

Trans RF MOSFET N-CH 65V 12-Pin HVSON EP

810 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	LTB
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Mode of Operation	1-Carrier W-CDMA
Process Technology	LDMOS
Maximum Drain Source Voltage (V)	65
Maximum Gate Source Voltage (V)	13
Maximum Gate Threshold Voltage (V)	2.3
Maximum VSWR	10
Maximum Gate Source Leakage Current (nA)	140
Maximum IDSS (uA)	1.4
Maximum Drain Source Resistance (mOhm)	1000(Typ)@6.05V
Typical Forward Transconductance (S)	0.16
Output Power (W)	2(Typ)
Typical Power Gain (dB)	16
Maximum Frequency (MHz)	2700
Minimum Frequency (MHz)	700
Typical Drain Efficiency (%)	23
Operating Temperature-Min	-65
Operating Temperature-Max	150
Original Package	HVSON EP
Pin Count	12
Terminal Form	Surface Mount
Package Height	0.82
Package Length	6
Package Width	4

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	LTB
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Mode of Operation	1-Carrier W-CDMA
Process Technology	LDMOS
Maximum Drain Source Voltage (V)	65
Maximum Gate Source Voltage (V)	13
Maximum Gate Threshold Voltage (V)	2.3
Maximum VSWR	10
Maximum Gate Source Leakage Current (nA)	140
Maximum IDSS (uA)	1.4
Maximum Drain Source Resistance (mOhm)	1000(Typ)@6.05V
Typical Forward Transconductance (S)	0.16
Output Power (W)	2(Typ)
Typical Power Gain (dB)	16
Maximum Frequency (MHz)	2700
Minimum Frequency (MHz)	700
Typical Drain Efficiency (%)	23
Operating Temperature-Min	-65
Operating Temperature-Max	150
Original Package	HVSON EP
Pin Count	12
Terminal Form	Surface Mount
Package Height	0.82
Package Length	6
Package Width	4