BLF7G10LS-250

SKU: 32240

Manufacturer: NXP Semiconductors

Trans RF MOSFET N-CH 65V 56A 3-Pin SOT-502B

1350 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	LTB
Automotive	Unknown
PPAP	Unknown
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Mode of Operation	2-Carrier W-CDMA
Process Technology	LDMOS
Maximum Drain Source Voltage (V)	65
Maximum Gate Source Voltage (V)	13
Maximum VSWR	10
Maximum Continuous Drain Current (A)	56
Maximum Drain Source Resistance (mOhm)	57(Typ)@6.05V
Typical Forward Transconductance (S)	22
Output Power (W)	60(Typ)
Typical Power Gain (dB)	19.5
Maximum Frequency (MHz)	960
Minimum Frequency (MHz)	869
Typical Drain Efficiency (%)	30.5
Operating Temperature-Min	-65
Operating Temperature-Max	200
Original Package	SOT-502B
Pin Count	3
Terminal Form	Surface Mount
Package Height	4.72(Max)
Package Length	20.7(Max)
Package Width	9.91(Max)

Your name

Your email

Enquiry

Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	LTB
Automotive	Unknown
PPAP	Unknown
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Mode of Operation	2-Carrier W-CDMA
Process Technology	LDMOS
Maximum Drain Source Voltage (V)	65
Maximum Gate Source Voltage (V)	13
Maximum VSWR	10
Maximum Continuous Drain Current (A)	56
Maximum Drain Source Resistance (mOhm)	57(Typ)@6.05V
Typical Forward Transconductance (S)	22
Output Power (W)	60(Typ)
Typical Power Gain (dB)	19.5
Maximum Frequency (MHz)	960
Minimum Frequency (MHz)	869
Typical Drain Efficiency (%)	30.5
Operating Temperature-Min	-65
Operating Temperature-Max	200
Original Package	SOT-502B
Pin Count	3
Terminal Form	Surface Mount
Package Height	4.72(Max)
Package Length	20.7(Max)
Package Width	9.91(Max)