EU RoHS
|
Compliant |
ECCN (US)
|
EAR99 |
Part Status
|
Obsolete |
Automotive
|
Unknown |
PPAP
|
Unknown |
Configuration
|
Single |
Type
|
MOSFET |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
1 |
Mode of Operation
|
2-Carrier W-CDMA |
Process Technology
|
LDMOS |
Maximum Drain Source Voltage (V)
|
65 |
Maximum Gate Source Voltage (V)
|
13 |
Maximum Gate Threshold Voltage (V)
|
2.4 |
Maximum VSWR
|
10 |
Maximum Continuous Drain Current (A)
|
34 |
Maximum Gate Source Leakage Current (nA)
|
450 |
Maximum IDSS (uA)
|
5 |
Maximum Drain Source Resistance (mOhm)
|
135@6.15V |
Typical Reverse Transfer Capacitance @ Vds (pF)
|
3.15@28V |
Typical Forward Transconductance (S)
|
12 |
Output Power (W)
|
30(Typ) |
Typical Power Gain (dB)
|
17 |
Maximum Frequency (MHz)
|
2170 |
Minimum Frequency (MHz)
|
2110 |
Typical Drain Efficiency (%)
|
28.5 |
Operating Temperature-Min
|
-65 |
Operating Temperature-Max
|
225 |
Original Package
|
SOT-502B |
Pin Count
|
3 |
Terminal Form
|
Surface Mount |
Package Height
|
4.72(Max) |
Package Length
|
20.7(Max) |
Package Width
|
9.91(Max) |