BLF2425M9LS140

SKU: 67673

Manufacturer: NXP Semiconductors

Trans RF MOSFET N-CH 65V

2130 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Mode of Operation	CW
Process Technology	LDMOS
Maximum Drain Source Voltage (V)	65
Maximum Gate Source Voltage (V)	13
Maximum Gate Threshold Voltage (V)	3.1
Maximum VSWR	10
Maximum Gate Source Leakage Current (nA)	420
Maximum IDSS (uA)	4.2
Maximum Drain Source Resistance (mOhm)	69(Typ)@6.85V
Typical Forward Transconductance (S)	13
Output Power (W)	140
Typical Power Gain (dB)	19
Maximum Frequency (MHz)	2500
Minimum Frequency (MHz)	2400
Typical Drain Efficiency (%)	58
Operating Temperature-Min	-65

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Mode of Operation	CW
Process Technology	LDMOS
Maximum Drain Source Voltage (V)	65
Maximum Gate Source Voltage (V)	13
Maximum Gate Threshold Voltage (V)	3.1
Maximum VSWR	10
Maximum Gate Source Leakage Current (nA)	420
Maximum IDSS (uA)	4.2
Maximum Drain Source Resistance (mOhm)	69(Typ)@6.85V
Typical Forward Transconductance (S)	13
Output Power (W)	140
Typical Power Gain (dB)	19
Maximum Frequency (MHz)	2500
Minimum Frequency (MHz)	2400
Typical Drain Efficiency (%)	58
Operating Temperature-Min	-65