AFT18H357-24SR6

SKU: 24771

Manufacturer: NXP Semiconductors

Trans RF MOSFET N-CH 65V 7-Pin NI-1230 T/R

610 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	LTB
HTS	8541.29.00.75
Automotive	No
PPAP	No
Channel Mode	Enhancement
Channel Type	N
Mode of Operation	1-Carrier W-CDMA
Process Technology	LDMOS
Maximum Drain Source Voltage (V)	65
Maximum Gate Source Voltage (V)	10
Maximum Gate Threshold Voltage (V)	1.6
Maximum VSWR	10
Maximum Gate Source Leakage Current (nA)	1000
Maximum IDSS (uA)	10
Output Power (W)	63(Typ)
Typical Power Gain (dB)	17.3
Maximum Frequency (MHz)	1995
Minimum Frequency (MHz)	1805
Typical Drain Efficiency (%)	50.3
Operating Temperature-Min	-40
Operating Temperature-Max	150
Original Package	NI-1230
Pin Count	7
Terminal Form	Surface Mount
Package Height	4.83(Max)
Package Length	32.39(Max)
Package Width	10.29(Max)

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	LTB
HTS	8541.29.00.75
Automotive	No
PPAP	No
Channel Mode	Enhancement
Channel Type	N
Mode of Operation	1-Carrier W-CDMA
Process Technology	LDMOS
Maximum Drain Source Voltage (V)	65
Maximum Gate Source Voltage (V)	10
Maximum Gate Threshold Voltage (V)	1.6
Maximum VSWR	10
Maximum Gate Source Leakage Current (nA)	1000
Maximum IDSS (uA)	10
Output Power (W)	63(Typ)
Typical Power Gain (dB)	17.3
Maximum Frequency (MHz)	1995
Minimum Frequency (MHz)	1805
Typical Drain Efficiency (%)	50.3
Operating Temperature-Min	-40
Operating Temperature-Max	150
Original Package	NI-1230
Pin Count	7
Terminal Form	Surface Mount
Package Height	4.83(Max)
Package Length	32.39(Max)
Package Width	10.29(Max)