APT6025BVRG

SKU: 95564

Manufacturer: Microsemi

Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-247 Tube

1520 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Process Technology	Power MOS V
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	600
Maximum Gate Source Voltage (V)	±30
Maximum Gate Threshold Voltage (V)	4
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	25
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	25
Maximum Drain Source Resistance (mOhm)	250@10V
Typical Gate Charge @ Vgs (nC)	185@10V
Typical Gate Charge @ 10V (nC)	185
Typical Gate to Drain Charge (nC)	85@10V
Typical Gate to Source Charge (nC)	23
Typical Reverse Recovery Charge (nC)	12000
Typical Input Capacitance @ Vds (pF)	4300@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	220@25V
Minimum Gate Threshold Voltage (V)	2
Typical Output Capacitance (pF)	525
Maximum Power Dissipation (mW)	370000
Typical Fall Time (ns)	10
Typical Rise Time (ns)	12
Typical Turn-Off Delay Time (ns)	55
Typical Turn-On Delay Time (ns)	14
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tube
Maximum Positive Gate Source Voltage (V)	30
Maximum Pulsed Drain Current @ TC=25°C (A)	100
Typical Gate Plateau Voltage (V)	5.2
Typical Reverse Recovery Time (ns)	580
Maximum Diode Forward Voltage (V)	1.3
Original Package	TO-247
Pin Count	3
Standard Package Method	TO-247
Terminal Form	Through Hole
Package Height	21.46(Max)
Package Length	16.26(Max)
Package Width	5.31(Max)
PCB changed	3
Tab	Tab

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Process Technology	Power MOS V
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	600
Maximum Gate Source Voltage (V)	±30
Maximum Gate Threshold Voltage (V)	4
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	25
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	25
Maximum Drain Source Resistance (mOhm)	250@10V
Typical Gate Charge @ Vgs (nC)	185@10V
Typical Gate Charge @ 10V (nC)	185
Typical Gate to Drain Charge (nC)	85@10V
Typical Gate to Source Charge (nC)	23
Typical Reverse Recovery Charge (nC)	12000
Typical Input Capacitance @ Vds (pF)	4300@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	220@25V
Minimum Gate Threshold Voltage (V)	2
Typical Output Capacitance (pF)	525
Maximum Power Dissipation (mW)	370000
Typical Fall Time (ns)	10
Typical Rise Time (ns)	12
Typical Turn-Off Delay Time (ns)	55
Typical Turn-On Delay Time (ns)	14
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tube
Maximum Positive Gate Source Voltage (V)	30
Maximum Pulsed Drain Current @ TC=25°C (A)	100
Typical Gate Plateau Voltage (V)	5.2
Typical Reverse Recovery Time (ns)	580
Maximum Diode Forward Voltage (V)	1.3
Original Package	TO-247
Pin Count	3
Standard Package Method	TO-247
Terminal Form	Through Hole
Package Height	21.46(Max)
Package Length	16.26(Max)
Package Width	5.31(Max)
PCB changed	3
Tab	Tab