APT5020BVR

SKU: 116819

Manufacturer: Microsemi

Trans MOSFET N-CH 500V 26A 3-Pin(3+Tab) TO-247

80 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Not Compliant
ECCN (US)	EAR99
Part Status	Unconfirmed
HTS	8541.29.00.95
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Process Technology	Power MOS V
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	500
Maximum Gate Source Voltage (V)	±30
Maximum Gate Threshold Voltage (V)	4
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	26
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	25
Maximum Drain Source Resistance (mOhm)	200@10V
Typical Gate Charge @ Vgs (nC)	150@10V
Typical Gate Charge @ 10V (nC)	150
Typical Gate to Drain Charge (nC)	70
Typical Gate to Source Charge (nC)	25
Typical Reverse Recovery Charge (nC)	10000
Typical Input Capacitance @ Vds (pF)	3700@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	200@25V
Minimum Gate Threshold Voltage (V)	2
Typical Output Capacitance (pF)	510
Maximum Power Dissipation (mW)	300000
Typical Fall Time (ns)	8
Typical Rise Time (ns)	10
Typical Turn-Off Delay Time (ns)	50
Typical Turn-On Delay Time (ns)	12
Operating Temperature-Min	-55
Operating Temperature-Max	150
Maximum Positive Gate Source Voltage (V)	30
Maximum Pulsed Drain Current @ TC=25°C (A)	104
Typical Gate Plateau Voltage (V)	6
Typical Reverse Recovery Time (ns)	510
Maximum Diode Forward Voltage (V)	1.3
Original Package	TO-247
Pin Count	3
Standard Package Method	TO-247
Terminal Form	Through Hole
Package Height	21.46(Max)
Package Length	16.26(Max)
Package Width	5.31(Max)
PCB changed	3
Tab	Tab

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Products specifications

EU RoHS	Not Compliant
ECCN (US)	EAR99
Part Status	Unconfirmed
HTS	8541.29.00.95
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Process Technology	Power MOS V
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	500
Maximum Gate Source Voltage (V)	±30
Maximum Gate Threshold Voltage (V)	4
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	26
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	25
Maximum Drain Source Resistance (mOhm)	200@10V
Typical Gate Charge @ Vgs (nC)	150@10V
Typical Gate Charge @ 10V (nC)	150
Typical Gate to Drain Charge (nC)	70
Typical Gate to Source Charge (nC)	25
Typical Reverse Recovery Charge (nC)	10000
Typical Input Capacitance @ Vds (pF)	3700@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	200@25V
Minimum Gate Threshold Voltage (V)	2
Typical Output Capacitance (pF)	510
Maximum Power Dissipation (mW)	300000
Typical Fall Time (ns)	8
Typical Rise Time (ns)	10
Typical Turn-Off Delay Time (ns)	50
Typical Turn-On Delay Time (ns)	12
Operating Temperature-Min	-55
Operating Temperature-Max	150
Maximum Positive Gate Source Voltage (V)	30
Maximum Pulsed Drain Current @ TC=25°C (A)	104
Typical Gate Plateau Voltage (V)	6
Typical Reverse Recovery Time (ns)	510
Maximum Diode Forward Voltage (V)	1.3
Original Package	TO-247
Pin Count	3
Standard Package Method	TO-247
Terminal Form	Through Hole
Package Height	21.46(Max)
Package Length	16.26(Max)
Package Width	5.31(Max)
PCB changed	3
Tab	Tab