|
EU RoHS
|
Compliant |
|
ECCN (US)
|
EAR99 |
|
Part Status
|
Active |
|
HTS
|
8541.29.00.95 |
|
Automotive
|
No |
|
PPAP
|
No |
|
Product Category
|
Power MOSFET |
|
Body Material
|
Si |
|
Configuration
|
Single Dual Source |
|
Channel Mode
|
Enhancement |
|
Channel Type
|
N |
|
Number of Elements per pcs
|
1 |
|
Maximum Drain Source Voltage (V)
|
1000 |
|
Maximum Gate Source Voltage (V)
|
±30 |
|
Maximum Continuous Drain Current (A)
|
20 |
|
Maximum Drain Source Resistance (mOhm)
|
440@10V |
|
Typical Gate Charge @ Vgs (nC)
|
260@10V |
|
Typical Gate Charge @ 10V (nC)
|
260 |
|
Typical Input Capacitance @ Vds (pF)
|
8500@25V |
|
Maximum Power Dissipation (mW)
|
460000 |
|
Typical Fall Time (ns)
|
35 |
|
Typical Rise Time (ns)
|
37 |
|
Typical Turn-Off Delay Time (ns)
|
140 |
|
Typical Turn-On Delay Time (ns)
|
36 |
|
Operating Temperature-Min
|
-55 |
|
Operating Temperature-Max
|
150 |
|
Packing Method
|
Tube |
|
Original Package
|
SOT-227 |
|
Pin Count
|
4 |
|
Standard Package Method
|
SOT |
|
Terminal Form
|
Screw |
|
Package Height
|
12.24(Max) |
|
Package Length
|
38.2(Max) |
|
Package Width
|
25.04(Max) |