EU RoHS
|
Compliant |
ECCN (US)
|
EAR99 |
Part Status
|
Active |
HTS
|
8541.29.00.95 |
Automotive
|
No |
PPAP
|
No |
Product Category
|
Power MOSFET |
Body Material
|
Si |
Process Technology
|
DMOS |
Configuration
|
Hex |
Channel Mode
|
Enhancement |
Channel Type
|
P |
Number of Elements per pcs
|
6 |
Maximum Drain Source Voltage (V)
|
200 |
Maximum Gate Threshold Voltage (V)
|
2.4 |
Maximum IDSS (uA)
|
10 |
Maximum Drain Source Resistance (mOhm)
|
9500@10V@P Channel |
Typical Input Capacitance @ Vds (pF)
|
55@25V@P Channel |
Typical Fall Time (ns)
|
15(Max) |
Typical Rise Time (ns)
|
15(Max) |
Typical Turn-Off Delay Time (ns)
|
20(Max) |
Typical Turn-On Delay Time (ns)
|
10(Max) |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
150 |
Packing Method
|
Tray |
Original Package
|
QFN EP |
Pin Count
|
56 |
Standard Package Method
|
QFN |
Terminal Form
|
Surface Mount |
Package Height
|
0.88 |
Package Length
|
8 |
Package Width
|
8 |
PCB changed
|
56 |