DN3545N8-G

SKU: 32750

Manufacturer: Microchip Technology

Trans MOSFET N-CH Si 450V 0.2A 4-Pin(3+Tab) SOT-89 T/R

1940 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	Si
Configuration	Single Dual Drain
Process Technology	VDMOS
Channel Mode	Depletion
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	450
Maximum Gate Source Voltage (V)	±20
Maximum Continuous Drain Current (A)	0.2
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	200000(Min)
Maximum Drain Source Resistance (mOhm)	20000@0V
Typical Input Capacitance @ Vds (pF)	360(Max)@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	15(Max)@25V
Typical Output Capacitance (pF)	40(Max)
Maximum Power Dissipation (mW)	1600
Typical Fall Time (ns)	40(Max)
Typical Rise Time (ns)	30(Max)
Typical Turn-Off Delay Time (ns)	30(Max)
Typical Turn-On Delay Time (ns)	20(Max)
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tape and Reel
Maximum Positive Gate Source Voltage (V)	20
Maximum Power Dissipation on PCB @ TC=25°C (W)	1.6
Maximum Pulsed Drain Current @ TC=25°C (A)	0.3
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	78
Typical Gate Plateau Voltage (V)	1.1
Typical Reverse Recovery Time (ns)	800
Maximum Diode Forward Voltage (V)	1.8
Pin Count	4
Standard Package Method	SOT
Original Package	SOT-89
Terminal Form	Surface Mount
Package Height	1.6(Max)
Package Length	4.6(Max)
Package Width	2.6(Max)
PCB changed	3
Tab	Tab

Your name

Your email

Enquiry

Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	Si
Configuration	Single Dual Drain
Process Technology	VDMOS
Channel Mode	Depletion
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	450
Maximum Gate Source Voltage (V)	±20
Maximum Continuous Drain Current (A)	0.2
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	200000(Min)
Maximum Drain Source Resistance (mOhm)	20000@0V
Typical Input Capacitance @ Vds (pF)	360(Max)@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	15(Max)@25V
Typical Output Capacitance (pF)	40(Max)
Maximum Power Dissipation (mW)	1600
Typical Fall Time (ns)	40(Max)
Typical Rise Time (ns)	30(Max)
Typical Turn-Off Delay Time (ns)	30(Max)
Typical Turn-On Delay Time (ns)	20(Max)
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tape and Reel
Maximum Positive Gate Source Voltage (V)	20
Maximum Power Dissipation on PCB @ TC=25°C (W)	1.6
Maximum Pulsed Drain Current @ TC=25°C (A)	0.3
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	78
Typical Gate Plateau Voltage (V)	1.1
Typical Reverse Recovery Time (ns)	800
Maximum Diode Forward Voltage (V)	1.8
Pin Count	4
Standard Package Method	SOT
Original Package	SOT-89
Terminal Form	Surface Mount
Package Height	1.6(Max)
Package Length	4.6(Max)
Package Width	2.6(Max)
PCB changed	3
Tab	Tab