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    DN2450N8-G

    SKU: 61151
    Manufacturer: Microchip Technology
    Trans MOSFET N-CH 500V 0.23A 4-Pin(3+Tab) SOT-89 T/R
    1290 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single Dual Drain
    Process Technology VDMOS
    Channel Mode Depletion
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 500
    Maximum Gate Source Voltage (V) ±20
    Operating Junction Temperature (°C) 150
    Maximum Continuous Drain Current (A) 0.23
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 700000(Min)
    Maximum Drain Source Resistance (mOhm) 10000@0V
    Typical Input Capacitance @ Vds (pF) 150@25V
    Typical Reverse Transfer Capacitance @ Vds (pF) 15@25V
    Typical Output Capacitance (pF) 40
    Maximum Power Dissipation (mW) 1600
    Typical Fall Time (ns) 15(Max)
    Typical Rise Time (ns) 20(Max)
    Typical Turn-Off Delay Time (ns) 15(Max)
    Typical Turn-On Delay Time (ns) 15(Max)
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Maximum Positive Gate Source Voltage (V) 20
    Maximum Power Dissipation on PCB @ TC=25°C (W) 1.6
    Maximum Pulsed Drain Current @ TC=25°C (A) 0.9
    Typical Reverse Recovery Time (ns) 800
    Maximum Diode Forward Voltage (V) 1.8
    Original Package SOT-89
    Pin Count 4
    Standard Package Method SOT
    Terminal Form Surface Mount
    Package Height 1.6(Max)
    Package Length 4.6(Max)
    Package Width 2.6(Max)
    PCB changed 3
    Tab Tab
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single Dual Drain
    Process Technology VDMOS
    Channel Mode Depletion
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 500
    Maximum Gate Source Voltage (V) ±20
    Operating Junction Temperature (°C) 150
    Maximum Continuous Drain Current (A) 0.23
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 700000(Min)
    Maximum Drain Source Resistance (mOhm) 10000@0V
    Typical Input Capacitance @ Vds (pF) 150@25V
    Typical Reverse Transfer Capacitance @ Vds (pF) 15@25V
    Typical Output Capacitance (pF) 40
    Maximum Power Dissipation (mW) 1600
    Typical Fall Time (ns) 15(Max)
    Typical Rise Time (ns) 20(Max)
    Typical Turn-Off Delay Time (ns) 15(Max)
    Typical Turn-On Delay Time (ns) 15(Max)
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Maximum Positive Gate Source Voltage (V) 20
    Maximum Power Dissipation on PCB @ TC=25°C (W) 1.6
    Maximum Pulsed Drain Current @ TC=25°C (A) 0.9
    Typical Reverse Recovery Time (ns) 800
    Maximum Diode Forward Voltage (V) 1.8
    Original Package SOT-89
    Pin Count 4
    Standard Package Method SOT
    Terminal Form Surface Mount
    Package Height 1.6(Max)
    Package Length 4.6(Max)
    Package Width 2.6(Max)
    PCB changed 3
    Tab Tab