EU RoHS
|
Compliant |
Part Status
|
NRND |
Automotive
|
No |
PPAP
|
No |
Product Category
|
Power MOSFET |
Body Material
|
Si |
Process Technology
|
HiperFET |
Configuration
|
Single |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
1 |
Maximum Drain Source Voltage (V)
|
800 |
Maximum Gate Source Voltage (V)
|
±20 |
Maximum Continuous Drain Current (A)
|
34 |
Maximum Drain Source Resistance (mOhm)
|
240@10V |
Typical Gate Charge @ Vgs (nC)
|
270@10V |
Typical Gate Charge @ 10V (nC)
|
270 |
Typical Input Capacitance @ Vds (pF)
|
7500@25V |
Maximum Power Dissipation (mW)
|
560000 |
Typical Fall Time (ns)
|
40 |
Typical Rise Time (ns)
|
45 |
Typical Turn-Off Delay Time (ns)
|
100 |
Typical Turn-On Delay Time (ns)
|
45 |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
150 |
Original Package
|
TO-264AA |
Pin Count
|
3 |
Terminal Form
|
Through Hole |
Package Height
|
26.16(Max) |
Package Length
|
19.96(Max) |
Package Width
|
5.13(Max) |
PCB changed
|
3 |