|
EU RoHS
|
Supplier Unconfirmed |
|
ECCN (US)
|
EAR99 |
|
Part Status
|
Active |
|
Product Category
|
Power MOSFET |
|
Configuration
|
Single |
|
Channel Mode
|
Enhancement |
|
Channel Type
|
N |
|
Number of Elements per pcs
|
1 |
|
Maximum Drain Source Voltage (V)
|
60 |
|
Maximum Gate Source Voltage (V)
|
±20 |
|
Maximum Gate Threshold Voltage (V)
|
2.5 |
|
Maximum Continuous Drain Current (A)
|
0.43 |
|
Maximum Gate Source Leakage Current (nA)
|
10000 |
|
Maximum IDSS (uA)
|
1 |
|
Maximum Drain Source Resistance (mOhm)
|
3000@10V |
|
Typical Gate Charge @ Vgs (nC)
|
305@4.5V |
|
Typical Input Capacitance @ Vds (pF)
|
30@25V |
|
Maximum Power Dissipation (mW)
|
830 |
|
Typical Fall Time (ns)
|
10 |
|
Typical Rise Time (ns)
|
3.5 |
|
Typical Turn-Off Delay Time (ns)
|
16 |
|
Typical Turn-On Delay Time (ns)
|
3.9 |
|
Operating Temperature-Min
|
-55 |