EU RoHS
|
Supplier Unconfirmed |
ECCN (US)
|
EAR99 |
Part Status
|
Active |
Product Category
|
Power MOSFET |
Configuration
|
Single |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
1 |
Maximum Drain Source Voltage (V)
|
60 |
Maximum Gate Source Voltage (V)
|
±20 |
Maximum Gate Threshold Voltage (V)
|
2.5 |
Maximum Continuous Drain Current (A)
|
0.43 |
Maximum Gate Source Leakage Current (nA)
|
10000 |
Maximum IDSS (uA)
|
1 |
Maximum Drain Source Resistance (mOhm)
|
3000@10V |
Typical Gate Charge @ Vgs (nC)
|
305@4.5V |
Typical Input Capacitance @ Vds (pF)
|
30@25V |
Maximum Power Dissipation (mW)
|
830 |
Typical Fall Time (ns)
|
10 |
Typical Rise Time (ns)
|
3.5 |
Typical Turn-Off Delay Time (ns)
|
16 |
Typical Turn-On Delay Time (ns)
|
3.9 |
Operating Temperature-Min
|
-55 |