|
EU RoHS
|
Compliant |
|
Part Status
|
Active |
|
Automotive
|
No |
|
PPAP
|
No |
|
Product Category
|
Power MOSFET |
|
Body Material
|
Si |
|
Configuration
|
Single |
|
Channel Mode
|
Enhancement |
|
Channel Type
|
N |
|
Number of Elements per pcs
|
1 |
|
Maximum Drain Source Voltage (V)
|
1000 |
|
Maximum Gate Source Voltage (V)
|
±30 |
|
Maximum Continuous Drain Current (A)
|
0.75 |
|
Maximum Drain Source Resistance (mOhm)
|
17000@10V |
|
Typical Gate Charge @ Vgs (nC)
|
7.8@10V |
|
Typical Gate Charge @ 10V (nC)
|
7.8 |
|
Typical Input Capacitance @ Vds (pF)
|
260@25V |
|
Maximum Power Dissipation (mW)
|
40000 |
|
Typical Fall Time (ns)
|
28 |
|
Typical Rise Time (ns)
|
19 |
|
Typical Turn-Off Delay Time (ns)
|
40 |
|
Typical Turn-On Delay Time (ns)
|
11 |
|
Operating Temperature-Min
|
-55 |
|
Operating Temperature-Max
|
150 |
|
Original Package
|
TO-220AB |
|
Pin Count
|
3 |
|
Terminal Form
|
Through Hole |
|
Package Height
|
9.15(Max) |
|
Package Length
|
10.66(Max) |
|
Package Width
|
4.82(Max) |
|
PCB changed
|
3 |