|
EU RoHS
|
Compliant |
|
Part Status
|
Active |
|
Automotive
|
No |
|
PPAP
|
No |
|
Product Category
|
Power MOSFET |
|
Body Material
|
Si |
|
Configuration
|
Single |
|
Channel Mode
|
Enhancement |
|
Channel Type
|
N |
|
Number of Elements per pcs
|
1 |
|
Maximum Drain Source Voltage (V)
|
4500 |
|
Maximum Gate Source Voltage (V)
|
±20 |
|
Maximum Gate Threshold Voltage (V)
|
6 |
|
Maximum Continuous Drain Current (A)
|
0.9 |
|
Maximum Gate Source Leakage Current (nA)
|
100 |
|
Maximum IDSS (uA)
|
50 |
|
Maximum Drain Source Resistance (mOhm)
|
80000@10V |
|
Typical Gate Charge @ Vgs (nC)
|
40@10V |
|
Typical Gate Charge @ 10V (nC)
|
40 |
|
Typical Input Capacitance @ Vds (pF)
|
1730@25V |
|
Maximum Power Dissipation (mW)
|
160000 |
|
Typical Fall Time (ns)
|
127 |
|
Typical Rise Time (ns)
|
60 |
|
Typical Turn-Off Delay Time (ns)
|
58 |
|
Typical Turn-On Delay Time (ns)
|
34 |
|
Operating Temperature-Min
|
-55 |
|
Operating Temperature-Max
|
150 |
|
Original Package
|
ISOPLUS I4-PAK |
|
Pin Count
|
3 |
|
Terminal Form
|
Through Hole |
|
Package Height
|
21.34(Max) |
|
Package Length
|
20.29(Max) |
|
Package Width
|
5.21(Max) |
|
PCB changed
|
3 |