IXTA3N120

SKU: 146503

Manufacturer: IXYS

Trans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK T/R/Tube

34760 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
HTS	8541.10.00.80
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	1200
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	5
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	3
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	25
Maximum Drain Source Resistance (mOhm)	4500@10V
Typical Gate Charge @ Vgs (nC)	42@10V
Typical Gate Charge @ 10V (nC)	42
Typical Gate to Drain Charge (nC)	21
Typical Gate to Source Charge (nC)	8
Typical Input Capacitance @ Vds (pF)	1100@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	40@25V
Minimum Gate Threshold Voltage (V)	2.5
Typical Output Capacitance (pF)	110
Maximum Power Dissipation (mW)	200000
Typical Fall Time (ns)	18
Typical Rise Time (ns)	15
Typical Turn-Off Delay Time (ns)	32
Typical Turn-On Delay Time (ns)	17
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tape and Reel
Maximum Positive Gate Source Voltage (V)	20
Maximum Pulsed Drain Current @ TC=25°C (A)	12
Typical Gate Plateau Voltage (V)	5
Typical Reverse Recovery Time (ns)	700
Maximum Diode Forward Voltage (V)	1.5
Original Package	D2PAK
Pin Count	3
Standard Package Method	TO-263
Terminal Form	Surface Mount
Package Height	4.83(Max)
Package Length	10.41(Max)
Package Width	9.4(Max)
PCB changed	2
Tab	Tab

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
HTS	8541.10.00.80
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	1200
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	5
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	3
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	25
Maximum Drain Source Resistance (mOhm)	4500@10V
Typical Gate Charge @ Vgs (nC)	42@10V
Typical Gate Charge @ 10V (nC)	42
Typical Gate to Drain Charge (nC)	21
Typical Gate to Source Charge (nC)	8
Typical Input Capacitance @ Vds (pF)	1100@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	40@25V
Minimum Gate Threshold Voltage (V)	2.5
Typical Output Capacitance (pF)	110
Maximum Power Dissipation (mW)	200000
Typical Fall Time (ns)	18
Typical Rise Time (ns)	15
Typical Turn-Off Delay Time (ns)	32
Typical Turn-On Delay Time (ns)	17
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tape and Reel
Maximum Positive Gate Source Voltage (V)	20
Maximum Pulsed Drain Current @ TC=25°C (A)	12
Typical Gate Plateau Voltage (V)	5
Typical Reverse Recovery Time (ns)	700
Maximum Diode Forward Voltage (V)	1.5
Original Package	D2PAK
Pin Count	3
Standard Package Method	TO-263
Terminal Form	Surface Mount
Package Height	4.83(Max)
Package Length	10.41(Max)
Package Width	9.4(Max)
PCB changed	2
Tab	Tab