IXTA1N100

SKU: 153680

Manufacturer: IXYS

Trans MOSFET N-CH Si 1KV 1.5A 3-Pin(2+Tab) TO-263AA

50310 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
HTS	8541.10.00.80
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	Si
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	1000
Maximum Gate Source Voltage (V)	±30
Maximum Continuous Drain Current (A)	1.5
Maximum Drain Source Resistance (mOhm)	11000@10V
Typical Gate Charge @ Vgs (nC)	14.5@10V
Typical Gate Charge @ 10V (nC)	14.5
Typical Input Capacitance @ Vds (pF)	400@25V
Maximum Power Dissipation (mW)	54000
Typical Fall Time (ns)	18
Typical Rise Time (ns)	19
Typical Turn-Off Delay Time (ns)	20
Typical Turn-On Delay Time (ns)	18
Operating Temperature-Min	-55
Operating Temperature-Max	150
Original Package	TO-263AA
Pin Count	3
Terminal Form	Surface Mount
Package Height	4.83(Max)
Package Length	10.29(Max)
Package Width	9.65(Max)
PCB changed	2

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
HTS	8541.10.00.80
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	Si
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	1000
Maximum Gate Source Voltage (V)	±30
Maximum Continuous Drain Current (A)	1.5
Maximum Drain Source Resistance (mOhm)	11000@10V
Typical Gate Charge @ Vgs (nC)	14.5@10V
Typical Gate Charge @ 10V (nC)	14.5
Typical Input Capacitance @ Vds (pF)	400@25V
Maximum Power Dissipation (mW)	54000
Typical Fall Time (ns)	18
Typical Rise Time (ns)	19
Typical Turn-Off Delay Time (ns)	20
Typical Turn-On Delay Time (ns)	18
Operating Temperature-Min	-55
Operating Temperature-Max	150
Original Package	TO-263AA
Pin Count	3
Terminal Form	Surface Mount
Package Height	4.83(Max)
Package Length	10.29(Max)
Package Width	9.65(Max)
PCB changed	2