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    IXFX66N85X

    SKU: 79872
    Manufacturer: IXYS
    Trans MOSFET N-CH 850V 66A 3-Pin(3+Tab) PLUS 247
    1370 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant with Exemption
    Part Status Active
    SVHC Yes
    SVHC Exceeds Threshold Yes
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single
    Process Technology HiperFET
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 850
    Maximum Gate Source Voltage (V) ±30
    Maximum Gate Threshold Voltage (V) 5.5
    Maximum Continuous Drain Current (A) 66
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 50
    Maximum Drain Source Resistance (mOhm) 65@10V
    Typical Gate Charge @ Vgs (nC) 230@10V
    Typical Gate Charge @ 10V (nC) 230
    Typical Input Capacitance @ Vds (pF) 8900@25V
    Maximum Power Dissipation (mW) 1250000
    Typical Fall Time (ns) 20
    Typical Rise Time (ns) 48
    Typical Turn-Off Delay Time (ns) 105
    Typical Turn-On Delay Time (ns) 40
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Original Package PLUS 247
    Pin Count 3
    Terminal Form Through Hole
    Package Height 21.34(Max)
    Package Length 16.13(Max)
    Package Width 5.21(Max)
    PCB changed 3
    Products specifications
    EU RoHS Compliant with Exemption
    Part Status Active
    SVHC Yes
    SVHC Exceeds Threshold Yes
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single
    Process Technology HiperFET
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 850
    Maximum Gate Source Voltage (V) ±30
    Maximum Gate Threshold Voltage (V) 5.5
    Maximum Continuous Drain Current (A) 66
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 50
    Maximum Drain Source Resistance (mOhm) 65@10V
    Typical Gate Charge @ Vgs (nC) 230@10V
    Typical Gate Charge @ 10V (nC) 230
    Typical Input Capacitance @ Vds (pF) 8900@25V
    Maximum Power Dissipation (mW) 1250000
    Typical Fall Time (ns) 20
    Typical Rise Time (ns) 48
    Typical Turn-Off Delay Time (ns) 105
    Typical Turn-On Delay Time (ns) 40
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Original Package PLUS 247
    Pin Count 3
    Terminal Form Through Hole
    Package Height 21.34(Max)
    Package Length 16.13(Max)
    Package Width 5.21(Max)
    PCB changed 3