IXFX230N20T

SKU: 115306

Manufacturer: IXYS

Trans MOSFET N-CH 200V 230A 3-Pin(3+Tab) ISOPLUS 247

300 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Process Technology	GigaMOS
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	200
Maximum Gate Source Voltage (V)	±20
Maximum Continuous Drain Current (A)	230
Maximum Drain Source Resistance (mOhm)	7.5@10V
Typical Gate Charge @ Vgs (nC)	378@10V
Typical Gate Charge @ 10V (nC)	378
Typical Input Capacitance @ Vds (pF)	28000@25V
Maximum Power Dissipation (mW)	1670000
Typical Fall Time (ns)	29
Typical Rise Time (ns)	35
Operating Temperature-Min	-55
Operating Temperature-Max	175
Original Package	ISOPLUS 247
Pin Count	3
Terminal Form	Through Hole
Package Height	21.34(Max)
Package Length	16.13(Max)
Package Width	5.21(Max)
PCB changed	3

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Process Technology	GigaMOS
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	200
Maximum Gate Source Voltage (V)	±20
Maximum Continuous Drain Current (A)	230
Maximum Drain Source Resistance (mOhm)	7.5@10V
Typical Gate Charge @ Vgs (nC)	378@10V
Typical Gate Charge @ 10V (nC)	378
Typical Input Capacitance @ Vds (pF)	28000@25V
Maximum Power Dissipation (mW)	1670000
Typical Fall Time (ns)	29
Typical Rise Time (ns)	35
Operating Temperature-Min	-55
Operating Temperature-Max	175
Original Package	ISOPLUS 247
Pin Count	3
Terminal Form	Through Hole
Package Height	21.34(Max)
Package Length	16.13(Max)
Package Width	5.21(Max)
PCB changed	3