|
EU RoHS
|
Not Compliant |
|
ECCN (US)
|
EAR99 |
|
Part Status
|
Obsolete |
|
Automotive
|
No |
|
PPAP
|
No |
|
Product Category
|
Power MOSFET |
|
Body Material
|
Si |
|
Process Technology
|
HEXFET |
|
Configuration
|
Single |
|
Channel Mode
|
Enhancement |
|
Channel Type
|
N |
|
Number of Elements per pcs
|
1 |
|
Maximum Drain Source Voltage (V)
|
55 |
|
Maximum Gate Source Voltage (V)
|
±16 |
|
Maximum Continuous Drain Current (A)
|
47 |
|
Maximum Drain Source Resistance (mOhm)
|
22@10V |
|
Typical Gate Charge @ Vgs (nC)
|
48(Max)@5V |
|
Typical Input Capacitance @ Vds (pF)
|
1700@25V |
|
Maximum Power Dissipation (mW)
|
3800 |
|
Typical Fall Time (ns)
|
15 |
|
Typical Rise Time (ns)
|
84 |
|
Typical Turn-Off Delay Time (ns)
|
26 |
|
Typical Turn-On Delay Time (ns)
|
11 |
|
Operating Temperature-Min
|
-55 |
|
Operating Temperature-Max
|
175 |
|
Packing Method
|
Tape and Reel |
|
Original Package
|
D2PAK |
|
Pin Count
|
3 |
|
Standard Package Method
|
TO-263 |
|
Terminal Form
|
Surface Mount |
|
Package Height
|
4.83(Max) |
|
Package Length
|
10.67(Max) |
|
Package Width
|
9.65(Max) |
|
PCB changed
|
2 |
|
Tab
|
Tab |