0 items
You have no items in your shopping cart.
All Categories
    Close
    Filters
    Preferences
    Search

    IRFU120N

    SKU: 68662
    Manufacturer: International Rectifier
    Trans MOSFET N-CH Si 100V 9.4A 3-Pin(3+Tab) IPAK Tube
    430 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Not Compliant
    ECCN (US) EAR99
    Part Status Obsolete
    HTS 8541.29.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Body Material Si
    Configuration Single
    Process Technology HEXFET
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 100
    Maximum Gate Source Voltage (V) ±20
    Maximum Continuous Drain Current (A) 9.4
    Maximum Drain Source Resistance (mOhm) 210@10V
    Typical Gate Charge @ Vgs (nC) 25(Max)@10V
    Typical Gate Charge @ 10V (nC) 25(Max)
    Typical Input Capacitance @ Vds (pF) 330@25V
    Maximum Power Dissipation (mW) 48000
    Typical Fall Time (ns) 23
    Typical Rise Time (ns) 23
    Typical Turn-Off Delay Time (ns) 32
    Typical Turn-On Delay Time (ns) 4.5
    Operating Temperature-Min -55
    Operating Temperature-Max 175
    Packing Method Tube
    Original Package IPAK
    Pin Count 3
    Standard Package Method TO-251
    Terminal Form Through Hole
    Package Height 6.1
    Package Length 6.6
    Package Width 2.3
    PCB changed 3
    Tab Tab
    Products specifications
    EU RoHS Not Compliant
    ECCN (US) EAR99
    Part Status Obsolete
    HTS 8541.29.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Body Material Si
    Configuration Single
    Process Technology HEXFET
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 100
    Maximum Gate Source Voltage (V) ±20
    Maximum Continuous Drain Current (A) 9.4
    Maximum Drain Source Resistance (mOhm) 210@10V
    Typical Gate Charge @ Vgs (nC) 25(Max)@10V
    Typical Gate Charge @ 10V (nC) 25(Max)
    Typical Input Capacitance @ Vds (pF) 330@25V
    Maximum Power Dissipation (mW) 48000
    Typical Fall Time (ns) 23
    Typical Rise Time (ns) 23
    Typical Turn-Off Delay Time (ns) 32
    Typical Turn-On Delay Time (ns) 4.5
    Operating Temperature-Min -55
    Operating Temperature-Max 175
    Packing Method Tube
    Original Package IPAK
    Pin Count 3
    Standard Package Method TO-251
    Terminal Form Through Hole
    Package Height 6.1
    Package Length 6.6
    Package Width 2.3
    PCB changed 3
    Tab Tab