EU RoHS
|
Not Compliant |
ECCN (US)
|
EAR99 |
Part Status
|
Obsolete |
Automotive
|
No |
PPAP
|
No |
Product Category
|
Power MOSFET |
Body Material
|
Si |
Configuration
|
Single Dual Drain |
Process Technology
|
HEXFET |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
1 |
Maximum Drain Source Voltage (V)
|
100 |
Maximum Gate Source Voltage (V)
|
±20 |
Maximum Continuous Drain Current (A)
|
2.2 |
Maximum Drain Source Resistance (mOhm)
|
200@10V |
Typical Gate Charge @ Vgs (nC)
|
17@10V |
Typical Gate Charge @ 10V (nC)
|
17 |
Typical Input Capacitance @ Vds (pF)
|
330@25V |
Maximum Power Dissipation (mW)
|
2100 |
Typical Fall Time (ns)
|
20 |
Typical Rise Time (ns)
|
18 |
Typical Turn-Off Delay Time (ns)
|
34 |
Typical Turn-On Delay Time (ns)
|
7.8 |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
150 |
Packing Method
|
Tape and Reel |
Original Package
|
SOT-223 |
Pin Count
|
4 |
Standard Package Method
|
SOT |
Terminal Form
|
Surface Mount |
Package Height
|
1.7(Max) |
Package Length
|
6.7(Max) |
Package Width
|
3.7(Max) |
PCB changed
|
3 |
Tab
|
Tab |