EU RoHS
|
Not Compliant |
ECCN (US)
|
EAR99 |
Part Status
|
Obsolete |
SVHC
|
Yes |
SVHC Exceeds Threshold
|
Yes |
Automotive
|
No |
PPAP
|
No |
Product Category
|
Power MOSFET |
Body Material
|
Si |
Process Technology
|
HEXFET |
Configuration
|
Single |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
1 |
Maximum Drain Source Voltage (V)
|
30 |
Maximum Gate Source Voltage (V)
|
±12 |
Maximum Continuous Drain Current (A)
|
13 |
Maximum Drain Source Resistance (mOhm)
|
9@10V |
Typical Gate Charge @ Vgs (nC)
|
16@4.5V |
Typical Input Capacitance @ Vds (pF)
|
2120@15V |
Maximum Power Dissipation (mW)
|
2100 |
Typical Fall Time (ns)
|
3.4 |
Typical Rise Time (ns)
|
12 |
Typical Turn-Off Delay Time (ns)
|
16 |
Typical Turn-On Delay Time (ns)
|
13 |
Operating Temperature-Min
|
-40 |
Operating Temperature-Max
|
150 |
Packing Method
|
Tape and Reel |
Original Package
|
Direct-FET ST |
Pin Count
|
7 |
Terminal Form
|
Surface Mount |
Package Height
|
0.53(Max) |
Package Length
|
3.95(Max) |
Package Width
|
3.95(Max) |
PCB changed
|
7 |