|
EU RoHS
|
Compliant |
|
ECCN (US)
|
EAR99 |
|
Part Status
|
Obsolete |
|
HTS
|
8541.21.00.75 |
|
Automotive
|
No |
|
PPAP
|
No |
|
Product Category
|
Power MOSFET |
|
Configuration
|
Single Quad Drain Triple Source |
|
Process Technology
|
HEXFET |
|
Channel Mode
|
Enhancement |
|
Channel Type
|
P |
|
Number of Elements per pcs
|
1 |
|
Maximum Drain Source Voltage (V)
|
150 |
|
Maximum Gate Source Voltage (V)
|
±20 |
|
Maximum Continuous Drain Current (A)
|
2.2 |
|
Maximum Drain Source Resistance (mOhm)
|
240@10V |
|
Typical Gate Charge @ Vgs (nC)
|
33@10V |
|
Typical Gate Charge @ 10V (nC)
|
33 |
|
Typical Input Capacitance @ Vds (pF)
|
1280@25V |
|
Maximum Power Dissipation (mW)
|
2500 |
|
Typical Fall Time (ns)
|
26 |
|
Typical Rise Time (ns)
|
15 |
|
Typical Turn-Off Delay Time (ns)
|
33 |
|
Typical Turn-On Delay Time (ns)
|
18 |
|
Operating Temperature-Min
|
-55 |
|
Operating Temperature-Max
|
150 |
|
Packing Method
|
Tape and Reel |
|
Pin Count
|
8 |
|
Standard Package Method
|
SOP |
|
Original Package
|
SOIC |
|
Terminal Form
|
Surface Mount |
|
Package Height
|
1.5(Max) |
|
Package Length
|
5(Max) |
|
Package Width
|
4(Max) |
|
PCB changed
|
8 |