SGD02N120

SKU: 106160

Manufacturer: Infineon Technologies AG

Trans IGBT Chip N-CH 1200V 6.2A 62000mW 3-Pin(2+Tab) DPAK T/R

2630 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	LTB
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Channel Type	N
Configuration	Single
Maximum Gate Emitter Voltage (V)	±20
Collector-Emitter Voltage-Max (V)	1200
Typical Collector Emitter Saturation Voltage (V)	3.1
Maximum Continuous Collector Current (A)	6.2
Maximum Gate Emitter Leakage Current (uA)	0.1
Maximum Power Dissipation (mW)	62000
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tape and Reel
Pin Count	3
Standard Package Method	TO-252
Original Package	DPAK
Terminal Form	Surface Mount
Package Height	2.3
Package Length	6.5
Package Width	6.22
PCB changed	2

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	LTB
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Channel Type	N
Configuration	Single
Maximum Gate Emitter Voltage (V)	±20
Collector-Emitter Voltage-Max (V)	1200
Typical Collector Emitter Saturation Voltage (V)	3.1
Maximum Continuous Collector Current (A)	6.2
Maximum Gate Emitter Leakage Current (uA)	0.1
Maximum Power Dissipation (mW)	62000
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tape and Reel
Pin Count	3
Standard Package Method	TO-252
Original Package	DPAK
Terminal Form	Surface Mount
Package Height	2.3
Package Length	6.5
Package Width	6.22
PCB changed	2