IRLS3036-7PPBF

SKU: 75629

Manufacturer: Infineon Technologies AG

Trans MOSFET N-CH Si 60V 300A 7-Pin(6+Tab) D2PAK Tube

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Netherlands

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Rohs State : Need to verify

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Obsolete
HTS	8541.29.00.95
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	Si
Configuration	Single Quint Source
Process Technology	HEXFET
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±16
Maximum Gate Threshold Voltage (V)	2.5
Operating Junction Temperature (°C)	-55 to 175
Maximum Continuous Drain Current (A)	300
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	20
Maximum Drain Source Resistance (mOhm)	1.9@10V
Typical Gate Charge @ Vgs (nC)	110@4.5V
Typical Gate to Drain Charge (nC)	53
Typical Gate to Source Charge (nC)	33
Typical Reverse Recovery Charge (nC)	140
Typical Input Capacitance @ Vds (pF)	11270@50V
Typical Reverse Transfer Capacitance @ Vds (pF)	520@50V
Minimum Gate Threshold Voltage (V)	1
Typical Output Capacitance (pF)	1025
Maximum Power Dissipation (mW)	380000
Typical Fall Time (ns)	170
Typical Rise Time (ns)	540
Typical Turn-Off Delay Time (ns)	89
Typical Turn-On Delay Time (ns)	81
Operating Temperature-Min	-55
Operating Temperature-Max	175
Packing Method	Tube
Maximum Pulsed Drain Current @ TC=25°C (A)	1000
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	40
Typical Gate Plateau Voltage (V)	3.9
Typical Reverse Recovery Time (ns)	57
Maximum Diode Forward Voltage (V)	1.3
Maximum Positive Gate Source Voltage (V)	16
Pin Count	7
Standard Package Method	TO-263
Original Package	D2PAK
Terminal Form	Surface Mount
Package Height	4.83(Max)
Package Length	10.67(Max)
Package Width	9.65(Max)
PCB changed	6

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Obsolete
HTS	8541.29.00.95
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	Si
Configuration	Single Quint Source
Process Technology	HEXFET
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±16
Maximum Gate Threshold Voltage (V)	2.5
Operating Junction Temperature (°C)	-55 to 175
Maximum Continuous Drain Current (A)	300
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	20
Maximum Drain Source Resistance (mOhm)	1.9@10V
Typical Gate Charge @ Vgs (nC)	110@4.5V
Typical Gate to Drain Charge (nC)	53
Typical Gate to Source Charge (nC)	33
Typical Reverse Recovery Charge (nC)	140
Typical Input Capacitance @ Vds (pF)	11270@50V
Typical Reverse Transfer Capacitance @ Vds (pF)	520@50V
Minimum Gate Threshold Voltage (V)	1
Typical Output Capacitance (pF)	1025
Maximum Power Dissipation (mW)	380000
Typical Fall Time (ns)	170
Typical Rise Time (ns)	540
Typical Turn-Off Delay Time (ns)	89
Typical Turn-On Delay Time (ns)	81
Operating Temperature-Min	-55
Operating Temperature-Max	175
Packing Method	Tube
Maximum Pulsed Drain Current @ TC=25°C (A)	1000
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	40
Typical Gate Plateau Voltage (V)	3.9
Typical Reverse Recovery Time (ns)	57
Maximum Diode Forward Voltage (V)	1.3
Maximum Positive Gate Source Voltage (V)	16
Pin Count	7
Standard Package Method	TO-263
Original Package	D2PAK
Terminal Form	Surface Mount
Package Height	4.83(Max)
Package Length	10.67(Max)
Package Width	9.65(Max)
PCB changed	6