IRFZ44NPBF

SKU: 47482

Manufacturer: Infineon Technologies AG

Trans MOSFET N-CH 55V 49A 3-Pin(3+Tab) TO-220AB Tube

512420 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Process Technology	HEXFET
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	55
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	4
Operating Junction Temperature (°C)	-55 to 175
Maximum Continuous Drain Current (A)	49
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	25
Maximum Drain Source Resistance (mOhm)	17.5@10V
Typical Gate Charge @ Vgs (nC)	63(Max)@10V
Typical Gate Charge @ 10V (nC)	63(Max)
Typical Gate to Drain Charge (nC)	23(Max)
Typical Gate to Source Charge (nC)	14(Max)
Typical Reverse Recovery Charge (nC)	170
Typical Input Capacitance @ Vds (pF)	1470@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	88@25V
Minimum Gate Threshold Voltage (V)	2
Typical Output Capacitance (pF)	360
Maximum Power Dissipation (mW)	94000
Typical Fall Time (ns)	45
Typical Rise Time (ns)	60
Typical Turn-Off Delay Time (ns)	44
Typical Turn-On Delay Time (ns)	12
Operating Temperature-Min	-55
Operating Temperature-Max	175
Packing Method	Tube
Maximum Positive Gate Source Voltage (V)	20
Maximum Pulsed Drain Current @ TC=25°C (A)	160
Typical Gate Plateau Voltage (V)	4.8
Typical Reverse Recovery Time (ns)	63
Maximum Diode Forward Voltage (V)	1.3
Original Package	TO-220AB
Pin Count	3
Standard Package Method	TO-220
Terminal Form	Through Hole
Package Height	9.02(Max)
Package Length	10.67(Max)
Package Width	4.83(Max)
PCB changed	3
Tab	Tab

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Process Technology	HEXFET
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	55
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	4
Operating Junction Temperature (°C)	-55 to 175
Maximum Continuous Drain Current (A)	49
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	25
Maximum Drain Source Resistance (mOhm)	17.5@10V
Typical Gate Charge @ Vgs (nC)	63(Max)@10V
Typical Gate Charge @ 10V (nC)	63(Max)
Typical Gate to Drain Charge (nC)	23(Max)
Typical Gate to Source Charge (nC)	14(Max)
Typical Reverse Recovery Charge (nC)	170
Typical Input Capacitance @ Vds (pF)	1470@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	88@25V
Minimum Gate Threshold Voltage (V)	2
Typical Output Capacitance (pF)	360
Maximum Power Dissipation (mW)	94000
Typical Fall Time (ns)	45
Typical Rise Time (ns)	60
Typical Turn-Off Delay Time (ns)	44
Typical Turn-On Delay Time (ns)	12
Operating Temperature-Min	-55
Operating Temperature-Max	175
Packing Method	Tube
Maximum Positive Gate Source Voltage (V)	20
Maximum Pulsed Drain Current @ TC=25°C (A)	160
Typical Gate Plateau Voltage (V)	4.8
Typical Reverse Recovery Time (ns)	63
Maximum Diode Forward Voltage (V)	1.3
Original Package	TO-220AB
Pin Count	3
Standard Package Method	TO-220
Terminal Form	Through Hole
Package Height	9.02(Max)
Package Length	10.67(Max)
Package Width	4.83(Max)
PCB changed	3
Tab	Tab