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    IRFS7730PBF

    SKU: 61638
    Manufacturer: Infineon Technologies AG
    Trans MOSFET N-CH Si 75V 246A 3-Pin(2+Tab) D2PAK Tube
    10 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant with Exemption
    ECCN (US) EAR99
    Part Status Obsolete
    HTS 8541.29.00.95
    SVHC Yes
    SVHC Exceeds Threshold Yes
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Body Material Si
    Configuration Single
    Process Technology HEXFET
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 75
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 3.7
    Maximum Continuous Drain Current (A) 246
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 2.6@10V
    Typical Gate Charge @ Vgs (nC) 271@10V
    Typical Gate Charge @ 10V (nC) 271
    Typical Input Capacitance @ Vds (pF) 13660@25V
    Maximum Power Dissipation (mW) 375000
    Typical Fall Time (ns) 115
    Typical Rise Time (ns) 120
    Typical Turn-Off Delay Time (ns) 180
    Typical Turn-On Delay Time (ns) 21
    Operating Temperature-Min -55
    Operating Temperature-Max 175
    Packing Method Tube
    Pin Count 3
    Standard Package Method TO-263
    Original Package D2PAK
    Terminal Form Surface Mount
    Package Height 4.83(Max)
    Package Length 10.67(Max)
    Package Width 9.65(Max)
    PCB changed 2
    Products specifications
    EU RoHS Compliant with Exemption
    ECCN (US) EAR99
    Part Status Obsolete
    HTS 8541.29.00.95
    SVHC Yes
    SVHC Exceeds Threshold Yes
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Body Material Si
    Configuration Single
    Process Technology HEXFET
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 75
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 3.7
    Maximum Continuous Drain Current (A) 246
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 2.6@10V
    Typical Gate Charge @ Vgs (nC) 271@10V
    Typical Gate Charge @ 10V (nC) 271
    Typical Input Capacitance @ Vds (pF) 13660@25V
    Maximum Power Dissipation (mW) 375000
    Typical Fall Time (ns) 115
    Typical Rise Time (ns) 120
    Typical Turn-Off Delay Time (ns) 180
    Typical Turn-On Delay Time (ns) 21
    Operating Temperature-Min -55
    Operating Temperature-Max 175
    Packing Method Tube
    Pin Count 3
    Standard Package Method TO-263
    Original Package D2PAK
    Terminal Form Surface Mount
    Package Height 4.83(Max)
    Package Length 10.67(Max)
    Package Width 9.65(Max)
    PCB changed 2