IRFR7446PBF

SKU: 122398

Manufacturer: Infineon Technologies AG

Trans MOSFET N-CH Si 40V 120A 3-Pin(2+Tab) DPAK Tube

Download sample

Request Free Samples

40 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

QUANTITY

Increments of 0 pcs

Specifications
Contact Us

Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Obsolete
HTS	8541.29.00.95
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	Si
Configuration	Single
Process Technology	HEXFET
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	40
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	3.9
Operating Junction Temperature (°C)	-55 to 175
Maximum Continuous Drain Current (A)	120
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	3.9@10V
Typical Gate Charge @ Vgs (nC)	65@10V
Typical Gate Charge @ 10V (nC)	65
Typical Gate to Drain Charge (nC)	22
Typical Gate to Source Charge (nC)	18
Typical Reverse Recovery Charge (nC)	13
Typical Input Capacitance @ Vds (pF)	3150@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	330@25V
Minimum Gate Threshold Voltage (V)	2.2
Typical Output Capacitance (pF)	480
Maximum Power Dissipation (mW)	98000
Typical Fall Time (ns)	20
Typical Rise Time (ns)	13
Typical Turn-Off Delay Time (ns)	32
Typical Turn-On Delay Time (ns)	9.8
Operating Temperature-Min	-55
Operating Temperature-Max	175
Packing Method	Tube
Maximum Pulsed Drain Current @ TC=25°C (A)	520
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	50
Typical Diode Forward Voltage (V)	0.9
Typical Gate Plateau Voltage (V)	5
Typical Reverse Recovery Time (ns)	20
Maximum Diode Forward Voltage (V)	1.3
Typical Gate Threshold Voltage (V)	3
Maximum Positive Gate Source Voltage (V)	20
Original Package	DPAK
Pin Count	3
Standard Package Method	TO-252
Terminal Form	Surface Mount
Package Height	2.39(Max)
Package Length	6.73(Max)
Package Width	6.22(Max)
PCB changed	2

Your name

Your email

Enquiry

Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Obsolete
HTS	8541.29.00.95
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	Si
Configuration	Single
Process Technology	HEXFET
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	40
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	3.9
Operating Junction Temperature (°C)	-55 to 175
Maximum Continuous Drain Current (A)	120
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	3.9@10V
Typical Gate Charge @ Vgs (nC)	65@10V
Typical Gate Charge @ 10V (nC)	65
Typical Gate to Drain Charge (nC)	22
Typical Gate to Source Charge (nC)	18
Typical Reverse Recovery Charge (nC)	13
Typical Input Capacitance @ Vds (pF)	3150@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	330@25V
Minimum Gate Threshold Voltage (V)	2.2
Typical Output Capacitance (pF)	480
Maximum Power Dissipation (mW)	98000
Typical Fall Time (ns)	20
Typical Rise Time (ns)	13
Typical Turn-Off Delay Time (ns)	32
Typical Turn-On Delay Time (ns)	9.8
Operating Temperature-Min	-55
Operating Temperature-Max	175
Packing Method	Tube
Maximum Pulsed Drain Current @ TC=25°C (A)	520
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	50
Typical Diode Forward Voltage (V)	0.9
Typical Gate Plateau Voltage (V)	5
Typical Reverse Recovery Time (ns)	20
Maximum Diode Forward Voltage (V)	1.3
Typical Gate Threshold Voltage (V)	3
Maximum Positive Gate Source Voltage (V)	20
Original Package	DPAK
Pin Count	3
Standard Package Method	TO-252
Terminal Form	Surface Mount
Package Height	2.39(Max)
Package Length	6.73(Max)
Package Width	6.22(Max)
PCB changed	2