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    IRFP450PBF

    SKU: 96826
    Manufacturer: Infineon Technologies AG
    Trans MOSFET N-CH 500V 14A 3-Pin(3+Tab) TO-247AC
    53110 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant with Exemption
    ECCN (US) EAR99
    Part Status NRND
    HTS 8541.29.00.95
    SVHC Yes
    SVHC Exceeds Threshold Yes
    Product Category Power MOSFET
    Configuration Single
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 500
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 4
    Operating Junction Temperature (°C) -55 to 150
    Maximum Continuous Drain Current (A) 14
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 25
    Maximum Drain Source Resistance (mOhm) 400@10V
    Typical Gate Charge @ Vgs (nC) 150(Max)@10V
    Typical Gate Charge @ 10V (nC) 150(Max)
    Typical Gate to Drain Charge (nC) 80(Max)
    Typical Gate to Source Charge (nC) 20(Max)
    Typical Reverse Recovery Charge (nC) 4800
    Typical Input Capacitance @ Vds (pF) 2600@25V
    Typical Reverse Transfer Capacitance @ Vds (pF) 340@25V
    Minimum Gate Threshold Voltage (V) 2
    Typical Output Capacitance (pF) 720
    Maximum Power Dissipation (mW) 190000
    Typical Fall Time (ns) 44
    Typical Rise Time (ns) 47
    Typical Turn-Off Delay Time (ns) 92
    Typical Turn-On Delay Time (ns) 17
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Maximum Positive Gate Source Voltage (V) 20
    Maximum Pulsed Drain Current @ TC=25°C (A) 56
    Typical Gate Plateau Voltage (V) 5.8
    Typical Reverse Recovery Time (ns) 540
    Maximum Diode Forward Voltage (V) 1.4
    Pin Count 3
    Standard Package Method TO-247
    Original Package TO-247AC
    Terminal Form Through Hole
    Package Height 20.7(Max)
    Package Length 15.87(Max)
    Package Width 5.31(Max)
    PCB changed 3
    Tab Tab
    Products specifications
    EU RoHS Compliant with Exemption
    ECCN (US) EAR99
    Part Status NRND
    HTS 8541.29.00.95
    SVHC Yes
    SVHC Exceeds Threshold Yes
    Product Category Power MOSFET
    Configuration Single
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 500
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 4
    Operating Junction Temperature (°C) -55 to 150
    Maximum Continuous Drain Current (A) 14
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 25
    Maximum Drain Source Resistance (mOhm) 400@10V
    Typical Gate Charge @ Vgs (nC) 150(Max)@10V
    Typical Gate Charge @ 10V (nC) 150(Max)
    Typical Gate to Drain Charge (nC) 80(Max)
    Typical Gate to Source Charge (nC) 20(Max)
    Typical Reverse Recovery Charge (nC) 4800
    Typical Input Capacitance @ Vds (pF) 2600@25V
    Typical Reverse Transfer Capacitance @ Vds (pF) 340@25V
    Minimum Gate Threshold Voltage (V) 2
    Typical Output Capacitance (pF) 720
    Maximum Power Dissipation (mW) 190000
    Typical Fall Time (ns) 44
    Typical Rise Time (ns) 47
    Typical Turn-Off Delay Time (ns) 92
    Typical Turn-On Delay Time (ns) 17
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Maximum Positive Gate Source Voltage (V) 20
    Maximum Pulsed Drain Current @ TC=25°C (A) 56
    Typical Gate Plateau Voltage (V) 5.8
    Typical Reverse Recovery Time (ns) 540
    Maximum Diode Forward Voltage (V) 1.4
    Pin Count 3
    Standard Package Method TO-247
    Original Package TO-247AC
    Terminal Form Through Hole
    Package Height 20.7(Max)
    Package Length 15.87(Max)
    Package Width 5.31(Max)
    PCB changed 3
    Tab Tab