IRF7907TRPBF

SKU: 26078

Manufacturer: Infineon Technologies AG

Trans MOSFET N-CH 30V 9.1A/11A 8-Pin SOIC T/R

8420 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Dual Dual Drain
Process Technology	HEXFET
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	2
Maximum Drain Source Voltage (V)	30
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	2.35
Maximum Continuous Drain Current (A)	11@Q 2
Maximum Drain Source Resistance (mOhm)	11.8@10V@Q 2
Typical Gate Charge @ Vgs (nC)	14@4.5V@Q 2
Typical Gate to Drain Charge (nC)	4.9@Q 2
Typical Gate to Source Charge (nC)	3@Q 2
Typical Reverse Recovery Charge (nC)	5.9@Q 2
Typical Switch Charge (nC)	6.2@Q 2
Typical Input Capacitance @ Vds (pF)	1790@15V@Q 2
Typical Output Capacitance (pF)	390@Q 2
Maximum Power Dissipation (mW)	2000
Typical Fall Time (ns)	5.3@Q 2
Typical Rise Time (ns)	14@Q 2
Typical Turn-Off Delay Time (ns)	13@Q 2
Typical Turn-On Delay Time (ns)	8@Q 2
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tape and Reel
Original Package	SOIC
Pin Count	8
Standard Package Method	SOP
Terminal Form	Surface Mount
Package Height	1.5(Max)
Package Length	5(Max)
Package Width	4(Max)
PCB changed	8

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Dual Dual Drain
Process Technology	HEXFET
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	2
Maximum Drain Source Voltage (V)	30
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	2.35
Maximum Continuous Drain Current (A)	11@Q 2
Maximum Drain Source Resistance (mOhm)	11.8@10V@Q 2
Typical Gate Charge @ Vgs (nC)	14@4.5V@Q 2
Typical Gate to Drain Charge (nC)	4.9@Q 2
Typical Gate to Source Charge (nC)	3@Q 2
Typical Reverse Recovery Charge (nC)	5.9@Q 2
Typical Switch Charge (nC)	6.2@Q 2
Typical Input Capacitance @ Vds (pF)	1790@15V@Q 2
Typical Output Capacitance (pF)	390@Q 2
Maximum Power Dissipation (mW)	2000
Typical Fall Time (ns)	5.3@Q 2
Typical Rise Time (ns)	14@Q 2
Typical Turn-Off Delay Time (ns)	13@Q 2
Typical Turn-On Delay Time (ns)	8@Q 2
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tape and Reel
Original Package	SOIC
Pin Count	8
Standard Package Method	SOP
Terminal Form	Surface Mount
Package Height	1.5(Max)
Package Length	5(Max)
Package Width	4(Max)
PCB changed	8