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    IRF7410TRPBF

    SKU: 139428
    Manufacturer: Infineon Technologies AG
    Trans MOSFET P-CH Si 12V 16A 8-Pin SOIC T/R
    29460 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Body Material Si
    Configuration Single Quad Drain Triple Source
    Process Technology HEXFET
    Channel Mode Enhancement
    Channel Type P
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 12
    Maximum Gate Source Voltage (V) ±8
    Maximum Gate Threshold Voltage (V) 0.9
    Maximum Continuous Drain Current (A) 16
    Maximum Drain Source Resistance (mOhm) 7@4.5V
    Typical Gate Charge @ Vgs (nC) 91@4.5V
    Typical Gate to Drain Charge (nC) 25
    Typical Gate to Source Charge (nC) 18
    Typical Reverse Recovery Charge (nC) 134000
    Typical Input Capacitance @ Vds (pF) 8676@10V
    Typical Output Capacitance (pF) 2344
    Maximum Power Dissipation (mW) 2500
    Typical Fall Time (ns) 200
    Typical Rise Time (ns) 12
    Typical Turn-Off Delay Time (ns) 271
    Typical Turn-On Delay Time (ns) 13
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Pin Count 8
    Standard Package Method SOP
    Original Package SOIC
    Terminal Form Surface Mount
    Package Height 1.5(Max)
    Package Length 5(Max)
    Package Width 4(Max)
    PCB changed 8
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Body Material Si
    Configuration Single Quad Drain Triple Source
    Process Technology HEXFET
    Channel Mode Enhancement
    Channel Type P
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 12
    Maximum Gate Source Voltage (V) ±8
    Maximum Gate Threshold Voltage (V) 0.9
    Maximum Continuous Drain Current (A) 16
    Maximum Drain Source Resistance (mOhm) 7@4.5V
    Typical Gate Charge @ Vgs (nC) 91@4.5V
    Typical Gate to Drain Charge (nC) 25
    Typical Gate to Source Charge (nC) 18
    Typical Reverse Recovery Charge (nC) 134000
    Typical Input Capacitance @ Vds (pF) 8676@10V
    Typical Output Capacitance (pF) 2344
    Maximum Power Dissipation (mW) 2500
    Typical Fall Time (ns) 200
    Typical Rise Time (ns) 12
    Typical Turn-Off Delay Time (ns) 271
    Typical Turn-On Delay Time (ns) 13
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Pin Count 8
    Standard Package Method SOP
    Original Package SOIC
    Terminal Form Surface Mount
    Package Height 1.5(Max)
    Package Length 5(Max)
    Package Width 4(Max)
    PCB changed 8