EU RoHS
|
Not Compliant |
ECCN (US)
|
EAR99 |
Part Status
|
Obsolete |
Automotive
|
No |
PPAP
|
No |
Product Category
|
Power MOSFET |
Body Material
|
Si |
Configuration
|
Dual Dual Drain |
Process Technology
|
HEXFET |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
2 |
Maximum Drain Source Voltage (V)
|
55 |
Maximum Gate Source Voltage (V)
|
±20 |
Maximum Gate Threshold Voltage (V)
|
1(Min) |
Maximum Continuous Drain Current (A)
|
4.7 |
Maximum Drain Source Resistance (mOhm)
|
50@10V |
Typical Gate Charge @ Vgs (nC)
|
24@10V |
Typical Gate Charge @ 10V (nC)
|
24 |
Typical Gate to Drain Charge (nC)
|
7 |
Typical Gate to Source Charge (nC)
|
2.3 |
Typical Reverse Recovery Charge (nC)
|
120 |
Typical Input Capacitance @ Vds (pF)
|
740@25V |
Typical Output Capacitance (pF)
|
190 |
Maximum Power Dissipation (mW)
|
2000 |
Typical Fall Time (ns)
|
13 |
Typical Rise Time (ns)
|
3.2 |
Typical Turn-Off Delay Time (ns)
|
32 |
Typical Turn-On Delay Time (ns)
|
8.3 |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
150 |
Packing Method
|
Tape and Reel |
Original Package
|
SOIC |
Pin Count
|
8 |
Standard Package Method
|
SOP |
Terminal Form
|
Surface Mount |
Package Height
|
1.5(Max) |
Package Length
|
5(Max) |
Package Width
|
4(Max) |
PCB changed
|
8 |