IRF7103Q

SKU: 75609

Manufacturer: Infineon Technologies AG

Trans MOSFET N-CH Si 50V 3A Automotive 8-Pin SOIC

6610 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Not Compliant
ECCN (US)	EAR99
Part Status	Obsolete
HTS	8542.31.00.01
Automotive	Yes
PPAP	Unknown
Product Category	Power MOSFET
Body Material	Si
Configuration	Dual Dual Drain
Process Technology	HEXFET
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	2
Maximum Drain Source Voltage (V)	50
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	3
Maximum Continuous Drain Current (A)	3
Maximum Drain Source Resistance (mOhm)	130@10V
Typical Gate Charge @ Vgs (nC)	10@10V
Typical Gate Charge @ 10V (nC)	10
Typical Gate to Drain Charge (nC)	2.8
Typical Gate to Source Charge (nC)	1.2
Typical Reverse Recovery Charge (nC)	45
Typical Input Capacitance @ Vds (pF)	255@25V
Typical Output Capacitance (pF)	69
Maximum Power Dissipation (mW)	2400
Typical Fall Time (ns)	2.3
Typical Rise Time (ns)	1.7
Typical Turn-Off Delay Time (ns)	15
Typical Turn-On Delay Time (ns)	5.1
Operating Temperature-Min	-55
Operating Temperature-Max	175
Original Package	SOIC
Pin Count	8
Standard Package Method	SOP
Terminal Form	Surface Mount
Package Height	1.5(Max)
Package Length	5(Max)
Package Width	4(Max)
PCB changed	8

Your name

Your email

Enquiry

Products specifications

EU RoHS	Not Compliant
ECCN (US)	EAR99
Part Status	Obsolete
HTS	8542.31.00.01
Automotive	Yes
PPAP	Unknown
Product Category	Power MOSFET
Body Material	Si
Configuration	Dual Dual Drain
Process Technology	HEXFET
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	2
Maximum Drain Source Voltage (V)	50
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	3
Maximum Continuous Drain Current (A)	3
Maximum Drain Source Resistance (mOhm)	130@10V
Typical Gate Charge @ Vgs (nC)	10@10V
Typical Gate Charge @ 10V (nC)	10
Typical Gate to Drain Charge (nC)	2.8
Typical Gate to Source Charge (nC)	1.2
Typical Reverse Recovery Charge (nC)	45
Typical Input Capacitance @ Vds (pF)	255@25V
Typical Output Capacitance (pF)	69
Maximum Power Dissipation (mW)	2400
Typical Fall Time (ns)	2.3
Typical Rise Time (ns)	1.7
Typical Turn-Off Delay Time (ns)	15
Typical Turn-On Delay Time (ns)	5.1
Operating Temperature-Min	-55
Operating Temperature-Max	175
Original Package	SOIC
Pin Count	8
Standard Package Method	SOP
Terminal Form	Surface Mount
Package Height	1.5(Max)
Package Length	5(Max)
Package Width	4(Max)
PCB changed	8