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    IRF7101

    SKU: 33189
    Manufacturer: Infineon Technologies AG
    Trans MOSFET N-CH Si 20V 3.5A 8-Pin SOIC T/R
    9600 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Not Compliant
    ECCN (US) EAR99
    Part Status Obsolete
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Body Material Si
    Configuration Dual Dual Drain
    Process Technology HEXFET
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 2
    Maximum Drain Source Voltage (V) 20
    Maximum Gate Source Voltage (V) ±12
    Maximum Gate Threshold Voltage (V) 3
    Maximum Continuous Drain Current (A) 3.5
    Maximum Drain Source Resistance (mOhm) 100@10V
    Typical Gate Charge @ Vgs (nC) 15(Max)@10V
    Typical Gate Charge @ 10V (nC) 15(Max)
    Typical Gate to Drain Charge (nC) 3.6(Max)
    Typical Gate to Source Charge (nC) 2(Max)
    Typical Reverse Recovery Charge (nC) 41
    Typical Input Capacitance @ Vds (pF) 320@15V
    Typical Output Capacitance (pF) 250
    Maximum Power Dissipation (mW) 2000
    Typical Fall Time (ns) 30
    Typical Rise Time (ns) 10
    Typical Turn-Off Delay Time (ns) 24
    Typical Turn-On Delay Time (ns) 7
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Original Package SOIC
    Pin Count 8
    Standard Package Method SOP
    Terminal Form Surface Mount
    Package Height 1.5(Max)
    Package Length 5(Max)
    Package Width 4(Max)
    PCB changed 8
    Products specifications
    EU RoHS Not Compliant
    ECCN (US) EAR99
    Part Status Obsolete
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Body Material Si
    Configuration Dual Dual Drain
    Process Technology HEXFET
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 2
    Maximum Drain Source Voltage (V) 20
    Maximum Gate Source Voltage (V) ±12
    Maximum Gate Threshold Voltage (V) 3
    Maximum Continuous Drain Current (A) 3.5
    Maximum Drain Source Resistance (mOhm) 100@10V
    Typical Gate Charge @ Vgs (nC) 15(Max)@10V
    Typical Gate Charge @ 10V (nC) 15(Max)
    Typical Gate to Drain Charge (nC) 3.6(Max)
    Typical Gate to Source Charge (nC) 2(Max)
    Typical Reverse Recovery Charge (nC) 41
    Typical Input Capacitance @ Vds (pF) 320@15V
    Typical Output Capacitance (pF) 250
    Maximum Power Dissipation (mW) 2000
    Typical Fall Time (ns) 30
    Typical Rise Time (ns) 10
    Typical Turn-Off Delay Time (ns) 24
    Typical Turn-On Delay Time (ns) 7
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Original Package SOIC
    Pin Count 8
    Standard Package Method SOP
    Terminal Form Surface Mount
    Package Height 1.5(Max)
    Package Length 5(Max)
    Package Width 4(Max)
    PCB changed 8