0 items
You have no items in your shopping cart.
All Categories
    Close
    Filters
    Preferences
    Search

    IRF3805S-7PPBF

    SKU: 96806
    Manufacturer: Infineon Technologies AG
    IRF3805S-7PPBF Infineon Technologies AG Transistors MOSFETs N-CH Si 55V 240A 7-Pin(6+Tab) D2PAK Tube - Arrow.com
    10400 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant with Exemption
    ECCN (US) EAR99
    Part Status Obsolete
    HTS 8541.21.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Body Material Si
    Configuration Single Quint Source
    Process Technology HEXFET
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 55
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 55
    Maximum Continuous Drain Current (A) 240
    Maximum Drain Source Resistance (mOhm) 2.6@10V
    Typical Gate Charge @ Vgs (nC) 130@10V
    Typical Gate Charge @ 10V (nC) 130
    Typical Input Capacitance @ Vds (pF) 7820@25V
    Maximum Power Dissipation (mW) 300000
    Typical Fall Time (ns) 52
    Typical Rise Time (ns) 130
    Typical Turn-Off Delay Time (ns) 80
    Typical Turn-On Delay Time (ns) 23
    Operating Temperature-Min -55
    Operating Temperature-Max 175
    Packing Method Tube
    Maximum Continuous Drain Current on PCB @ TC=25°C (A) 160
    Typical Gate Threshold Voltage (V) 10
    Pin Count 7
    Standard Package Method TO-263
    Original Package D2PAK
    Terminal Form Surface Mount
    Package Height 4.83(Max)
    Package Length 10.67(Max)
    Package Width 9.65(Max)
    PCB changed 6
    Products specifications
    EU RoHS Compliant with Exemption
    ECCN (US) EAR99
    Part Status Obsolete
    HTS 8541.21.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Body Material Si
    Configuration Single Quint Source
    Process Technology HEXFET
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 55
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 55
    Maximum Continuous Drain Current (A) 240
    Maximum Drain Source Resistance (mOhm) 2.6@10V
    Typical Gate Charge @ Vgs (nC) 130@10V
    Typical Gate Charge @ 10V (nC) 130
    Typical Input Capacitance @ Vds (pF) 7820@25V
    Maximum Power Dissipation (mW) 300000
    Typical Fall Time (ns) 52
    Typical Rise Time (ns) 130
    Typical Turn-Off Delay Time (ns) 80
    Typical Turn-On Delay Time (ns) 23
    Operating Temperature-Min -55
    Operating Temperature-Max 175
    Packing Method Tube
    Maximum Continuous Drain Current on PCB @ TC=25°C (A) 160
    Typical Gate Threshold Voltage (V) 10
    Pin Count 7
    Standard Package Method TO-263
    Original Package D2PAK
    Terminal Form Surface Mount
    Package Height 4.83(Max)
    Package Length 10.67(Max)
    Package Width 9.65(Max)
    PCB changed 6