IPW60R070CFD7

SKU: 139410

Manufacturer: Infineon Technologies AG

N Channel Power MOSFET 650V, 31A, to 247, Vertical

230 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant
Part Status	Active
Product Category	Power MOSFET
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	600
Maximum Gate Source Voltage (V)	20
Maximum Gate Threshold Voltage (V)	4.5
Maximum Continuous Drain Current (A)	31
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	70@10V
Typical Gate Charge @ Vgs (nC)	15@10V
Typical Gate Charge @ 10V (nC)	15
Typical Input Capacitance @ Vds (pF)	2721@400V
Maximum Power Dissipation (mW)	156000
Typical Fall Time (ns)	6
Typical Rise Time (ns)	23
Typical Turn-Off Delay Time (ns)	99
Typical Turn-On Delay Time (ns)	26
Operating Temperature-Min	-55
Operating Temperature-Max	150

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Products specifications

EU RoHS	Compliant
Part Status	Active
Product Category	Power MOSFET
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	600
Maximum Gate Source Voltage (V)	20
Maximum Gate Threshold Voltage (V)	4.5
Maximum Continuous Drain Current (A)	31
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	70@10V
Typical Gate Charge @ Vgs (nC)	15@10V
Typical Gate Charge @ 10V (nC)	15
Typical Input Capacitance @ Vds (pF)	2721@400V
Maximum Power Dissipation (mW)	156000
Typical Fall Time (ns)	6
Typical Rise Time (ns)	23
Typical Turn-Off Delay Time (ns)	99
Typical Turn-On Delay Time (ns)	26
Operating Temperature-Min	-55
Operating Temperature-Max	150