IPP60R170CFD7

SKU: 108122

Manufacturer: Infineon Technologies AG

Trans MOSFET N-CH 600V 14A

2220 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	600
Maximum Gate Source Voltage (V)	20
Maximum Continuous Drain Current (A)	14
Maximum Drain Source Resistance (mOhm)	170@10V
Typical Gate Charge @ Vgs (nC)	28@10V
Typical Gate Charge @ 10V (nC)	28
Typical Input Capacitance @ Vds (pF)	1199@400V
Maximum Power Dissipation (mW)	75000
Typical Fall Time (ns)	9
Typical Rise Time (ns)	15
Typical Turn-Off Delay Time (ns)	68
Typical Turn-On Delay Time (ns)	31
Operating Temperature-Min	-55

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	600
Maximum Gate Source Voltage (V)	20
Maximum Continuous Drain Current (A)	14
Maximum Drain Source Resistance (mOhm)	170@10V
Typical Gate Charge @ Vgs (nC)	28@10V
Typical Gate Charge @ 10V (nC)	28
Typical Input Capacitance @ Vds (pF)	1199@400V
Maximum Power Dissipation (mW)	75000
Typical Fall Time (ns)	9
Typical Rise Time (ns)	15
Typical Turn-Off Delay Time (ns)	68
Typical Turn-On Delay Time (ns)	31
Operating Temperature-Min	-55