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    IPP076N15N5

    SKU: 103834
    Manufacturer: Infineon Technologies AG
    Trans MOSFET N-CH 150V 112A 3-Pin(3+Tab) TO-220 Tube
    1240 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant with Exemption
    ECCN (US) EAR99
    Part Status Active
    SVHC Yes
    SVHC Exceeds Threshold Yes
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single
    Process Technology OptiMOS™5
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 150
    Maximum Gate Source Voltage (V) 20
    Maximum Gate Threshold Voltage (V) 4.6
    Maximum Continuous Drain Current (A) 112
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 7.6@10V
    Typical Gate Charge @ Vgs (nC) 49@10V
    Typical Gate Charge @ 10V (nC) 49
    Typical Input Capacitance @ Vds (pF) 3600@75V
    Maximum Power Dissipation (mW) 214000
    Typical Fall Time (ns) 4
    Typical Rise Time (ns) 4
    Typical Turn-Off Delay Time (ns) 20
    Typical Turn-On Delay Time (ns) 14
    Operating Temperature-Min -55
    Operating Temperature-Max 175
    Packing Method Tube
    Original Package TO-220
    Pin Count 3
    Terminal Form Through Hole
    Package Height 9.45(Max)
    Package Length 10.36(Max)
    Package Width 4.57(Max)
    PCB changed 3
    Products specifications
    EU RoHS Compliant with Exemption
    ECCN (US) EAR99
    Part Status Active
    SVHC Yes
    SVHC Exceeds Threshold Yes
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single
    Process Technology OptiMOS™5
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 150
    Maximum Gate Source Voltage (V) 20
    Maximum Gate Threshold Voltage (V) 4.6
    Maximum Continuous Drain Current (A) 112
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 7.6@10V
    Typical Gate Charge @ Vgs (nC) 49@10V
    Typical Gate Charge @ 10V (nC) 49
    Typical Input Capacitance @ Vds (pF) 3600@75V
    Maximum Power Dissipation (mW) 214000
    Typical Fall Time (ns) 4
    Typical Rise Time (ns) 4
    Typical Turn-Off Delay Time (ns) 20
    Typical Turn-On Delay Time (ns) 14
    Operating Temperature-Min -55
    Operating Temperature-Max 175
    Packing Method Tube
    Original Package TO-220
    Pin Count 3
    Terminal Form Through Hole
    Package Height 9.45(Max)
    Package Length 10.36(Max)
    Package Width 4.57(Max)
    PCB changed 3