IPD60N10S4L-12

SKU: 103829

Manufacturer: Infineon Technologies AG

Optimos T2 Power Transistor

54590 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
Product Category	Power MOSFET
Configuration	Single
Process Technology	OptiMOS-T2
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	100
Maximum Gate Source Voltage (V)	±16
Maximum Gate Threshold Voltage (V)	2.1
Maximum Continuous Drain Current (A)	60
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	12@10V
Typical Gate Charge @ Vgs (nC)	38@10V
Typical Gate Charge @ 10V (nC)	38
Typical Input Capacitance @ Vds (pF)	2440@25V
Maximum Power Dissipation (mW)	94000
Typical Fall Time (ns)	21
Typical Rise Time (ns)	3
Typical Turn-Off Delay Time (ns)	20
Typical Turn-On Delay Time (ns)	4
Operating Temperature-Min	-55
Operating Temperature-Max	175
Supplier Temperature Grade	Automotive

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
Product Category	Power MOSFET
Configuration	Single
Process Technology	OptiMOS-T2
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	100
Maximum Gate Source Voltage (V)	±16
Maximum Gate Threshold Voltage (V)	2.1
Maximum Continuous Drain Current (A)	60
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	12@10V
Typical Gate Charge @ Vgs (nC)	38@10V
Typical Gate Charge @ 10V (nC)	38
Typical Input Capacitance @ Vds (pF)	2440@25V
Maximum Power Dissipation (mW)	94000
Typical Fall Time (ns)	21
Typical Rise Time (ns)	3
Typical Turn-Off Delay Time (ns)	20
Typical Turn-On Delay Time (ns)	4
Operating Temperature-Min	-55
Operating Temperature-Max	175
Supplier Temperature Grade	Automotive