IPAN70R900P7S

SKU: 47434

Manufacturer: Infineon Technologies AG

Trans MOSFET N-CH 700V 6A Tube

830 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	700
Maximum Gate Source Voltage (V)	16
Maximum Continuous Drain Current (A)	6
Maximum Drain Source Resistance (mOhm)	900@10V
Typical Gate Charge @ Vgs (nC)	6.8@10V
Typical Gate Charge @ 10V (nC)	6.8
Typical Input Capacitance @ Vds (pF)	211@400V
Maximum Power Dissipation (mW)	17900
Typical Fall Time (ns)	31
Typical Rise Time (ns)	4.7
Typical Turn-Off Delay Time (ns)	58
Typical Turn-On Delay Time (ns)	12
Operating Temperature-Min	-40
Operating Temperature-Max	150

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	700
Maximum Gate Source Voltage (V)	16
Maximum Continuous Drain Current (A)	6
Maximum Drain Source Resistance (mOhm)	900@10V
Typical Gate Charge @ Vgs (nC)	6.8@10V
Typical Gate Charge @ 10V (nC)	6.8
Typical Input Capacitance @ Vds (pF)	211@400V
Maximum Power Dissipation (mW)	17900
Typical Fall Time (ns)	31
Typical Rise Time (ns)	4.7
Typical Turn-Off Delay Time (ns)	58
Typical Turn-On Delay Time (ns)	12
Operating Temperature-Min	-40
Operating Temperature-Max	150