IKW50N65H5

SKU: 89676

Manufacturer: Infineon Technologies AG

7740 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

ECCN (US)	EAR99
Channel Type	N
Configuration	Single
Maximum Gate Emitter Voltage (V)	±20
Collector-Emitter Voltage-Max (V)	650
Typical Collector Emitter Saturation Voltage (V)	1.65
Maximum Continuous Collector Current (A)	80
Maximum Gate Emitter Leakage Current (uA)	0.1
Maximum Power Dissipation (mW)	305000
Operating Temperature-Min	-40
Operating Temperature-Max	175

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Products specifications

ECCN (US)	EAR99
Channel Type	N
Configuration	Single
Maximum Gate Emitter Voltage (V)	±20
Collector-Emitter Voltage-Max (V)	650
Typical Collector Emitter Saturation Voltage (V)	1.65
Maximum Continuous Collector Current (A)	80
Maximum Gate Emitter Leakage Current (uA)	0.1
Maximum Power Dissipation (mW)	305000
Operating Temperature-Min	-40
Operating Temperature-Max	175