IKA10N65ET6

SKU: 19044

Manufacturer: Infineon Technologies AG

Trans IGBT Chip N-CH 650V 15A 40000mW Tube

610 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	NRND
Channel Type	N
Configuration	Single
Maximum Gate Emitter Voltage (V)	±20
Collector-Emitter Voltage-Max (V)	650
Typical Collector Emitter Saturation Voltage (V)	1.5
Maximum Continuous Collector Current (A)	15
Maximum Gate Emitter Leakage Current (uA)	0.1
Maximum Power Dissipation (mW)	40000
Operating Temperature-Min	-40
Operating Temperature-Max	175

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	NRND
Channel Type	N
Configuration	Single
Maximum Gate Emitter Voltage (V)	±20
Collector-Emitter Voltage-Max (V)	650
Typical Collector Emitter Saturation Voltage (V)	1.5
Maximum Continuous Collector Current (A)	15
Maximum Gate Emitter Leakage Current (uA)	0.1
Maximum Power Dissipation (mW)	40000
Operating Temperature-Min	-40
Operating Temperature-Max	175