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    BSZ034N04LS

    SKU: 58547
    Manufacturer: Infineon Technologies AG
    Trans MOSFET N-CH 40V 19A T/R
    1760 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant with Exemption
    ECCN (US) EAR99
    Part Status Active
    SVHC Yes
    SVHC Exceeds Threshold Yes
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single Quad Drain Triple Source
    Process Technology OptiMOS
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 40
    Maximum Gate Source Voltage (V) 20
    Maximum Gate Threshold Voltage (V) 2
    Operating Junction Temperature (°C) -55 to 150
    Maximum Continuous Drain Current (A) 19
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 3.4@10V
    Typical Gate Charge @ Vgs (nC) 13@4.5V
    Typical Gate Charge @ 10V (nC) 25
    Typical Input Capacitance @ Vds (pF) 1800@20V
    Maximum Power Dissipation (mW) 2100
    Typical Fall Time (ns) 3
    Typical Rise Time (ns) 4
    Typical Turn-Off Delay Time (ns) 19
    Typical Turn-On Delay Time (ns) 4
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Products specifications
    EU RoHS Compliant with Exemption
    ECCN (US) EAR99
    Part Status Active
    SVHC Yes
    SVHC Exceeds Threshold Yes
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single Quad Drain Triple Source
    Process Technology OptiMOS
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 40
    Maximum Gate Source Voltage (V) 20
    Maximum Gate Threshold Voltage (V) 2
    Operating Junction Temperature (°C) -55 to 150
    Maximum Continuous Drain Current (A) 19
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 3.4@10V
    Typical Gate Charge @ Vgs (nC) 13@4.5V
    Typical Gate Charge @ 10V (nC) 25
    Typical Input Capacitance @ Vds (pF) 1800@20V
    Maximum Power Dissipation (mW) 2100
    Typical Fall Time (ns) 3
    Typical Rise Time (ns) 4
    Typical Turn-Off Delay Time (ns) 19
    Typical Turn-On Delay Time (ns) 4
    Operating Temperature-Min -55
    Operating Temperature-Max 150