BSM150GB120DN2

SKU: 114979

Manufacturer: Infineon Technologies AG

Trans IGBT Module N-CH 1200V 210A 1250000mW 7-Pin 62MM-1

290 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Unconfirmed
Automotive	No
PPAP	No
Channel Type	N
Configuration	Dual
Typical Collector Emitter Saturation Voltage (V)	2.5
Collector-Emitter Voltage-Max (V)	1200
Maximum Power Dissipation (mW)	1250000
Maximum Gate Emitter Voltage (V)	±20
Maximum Continuous Collector Current (A)	210
Maximum Gate Emitter Leakage Current (uA)	0.32
Operating Temperature-Min	-40
Operating Temperature-Max	150
Original Package	62MM-1
Pin Count	7
Standard Package Method	62MM
Terminal Form	Screw
Package Height	30.5
Package Length	106.4
Package Width	61.4

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Unconfirmed
Automotive	No
PPAP	No
Channel Type	N
Configuration	Dual
Typical Collector Emitter Saturation Voltage (V)	2.5
Collector-Emitter Voltage-Max (V)	1200
Maximum Power Dissipation (mW)	1250000
Maximum Gate Emitter Voltage (V)	±20
Maximum Continuous Collector Current (A)	210
Maximum Gate Emitter Leakage Current (uA)	0.32
Operating Temperature-Min	-40
Operating Temperature-Max	150
Original Package	62MM-1
Pin Count	7
Standard Package Method	62MM
Terminal Form	Screw
Package Height	30.5
Package Length	106.4
Package Width	61.4