BSC117N08NS5

SKU: 138464

Manufacturer: Infineon Technologies AG

Trans MOSFET N-CH 80V 49A Automotive 8-Pin TDSON EP T/R

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Netherlands

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	Unknown
PPAP	Unknown
Product Category	Power MOSFET
Configuration	Single Quad Drain Triple Source
Process Technology	OptiMOS 5
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	80
Maximum Gate Source Voltage (V)	20
Maximum Gate Threshold Voltage (V)	3.8
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	49
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	11.7@10V
Typical Gate Charge @ Vgs (nC)	15@10V
Typical Gate Charge @ 10V (nC)	15
Typical Gate to Drain Charge (nC)	3
Typical Gate to Source Charge (nC)	5
Typical Reverse Recovery Charge (nC)	45
Typical Switch Charge (nC)	6
Typical Input Capacitance @ Vds (pF)	1000@40V
Typical Reverse Transfer Capacitance @ Vds (pF)	11@40V
Minimum Gate Threshold Voltage (V)	2.2
Typical Output Capacitance (pF)	180
Maximum Power Dissipation (mW)	2500
Typical Fall Time (ns)	3
Typical Rise Time (ns)	4
Typical Turn-Off Delay Time (ns)	16
Typical Turn-On Delay Time (ns)	10
Operating Temperature-Min	-55
Operating Temperature-Max	150
Supplier Temperature Grade	Automotive
Packing Method	Tape and Reel
Maximum Power Dissipation on PCB @ TC=25°C (W)	2.5
Maximum Pulsed Drain Current @ TC=25°C (A)	196
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	50
Typical Diode Forward Voltage (V)	0.9
Typical Gate Plateau Voltage (V)	5
Typical Reverse Recovery Time (ns)	37
Maximum Diode Forward Voltage (V)	1.1
Typical Gate Threshold Voltage (V)	3
Maximum Gate Resistance (Ohm)	1.7
Maximum Positive Gate Source Voltage (V)	20
Maximum Continuous Drain Current on PCB @ TC=25°C (A)	19
Pin Count	8
Standard Package Method	SON
Original Package	TDSON EP
Terminal Form	Surface Mount
Package Height	1
Package Length	5.15
Package Width	5.9
PCB changed	8

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	Unknown
PPAP	Unknown
Product Category	Power MOSFET
Configuration	Single Quad Drain Triple Source
Process Technology	OptiMOS 5
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	80
Maximum Gate Source Voltage (V)	20
Maximum Gate Threshold Voltage (V)	3.8
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	49
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	11.7@10V
Typical Gate Charge @ Vgs (nC)	15@10V
Typical Gate Charge @ 10V (nC)	15
Typical Gate to Drain Charge (nC)	3
Typical Gate to Source Charge (nC)	5
Typical Reverse Recovery Charge (nC)	45
Typical Switch Charge (nC)	6
Typical Input Capacitance @ Vds (pF)	1000@40V
Typical Reverse Transfer Capacitance @ Vds (pF)	11@40V
Minimum Gate Threshold Voltage (V)	2.2
Typical Output Capacitance (pF)	180
Maximum Power Dissipation (mW)	2500
Typical Fall Time (ns)	3
Typical Rise Time (ns)	4
Typical Turn-Off Delay Time (ns)	16
Typical Turn-On Delay Time (ns)	10
Operating Temperature-Min	-55
Operating Temperature-Max	150
Supplier Temperature Grade	Automotive
Packing Method	Tape and Reel
Maximum Power Dissipation on PCB @ TC=25°C (W)	2.5
Maximum Pulsed Drain Current @ TC=25°C (A)	196
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	50
Typical Diode Forward Voltage (V)	0.9
Typical Gate Plateau Voltage (V)	5
Typical Reverse Recovery Time (ns)	37
Maximum Diode Forward Voltage (V)	1.1
Typical Gate Threshold Voltage (V)	3
Maximum Gate Resistance (Ohm)	1.7
Maximum Positive Gate Source Voltage (V)	20
Maximum Continuous Drain Current on PCB @ TC=25°C (A)	19
Pin Count	8
Standard Package Method	SON
Original Package	TDSON EP
Terminal Form	Surface Mount
Package Height	1
Package Length	5.15
Package Width	5.9
PCB changed	8